领域:高端装备制造产业 学校:南京大学职称:副教授
1)主要从事Si基光电子器件研究2)二维过渡金属化合物(MoS2)光学性质研究
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具体了解该专家信息,请致电:027-87555799 邮箱 haizhi@uipplus.com
Yu, Linwei; Xu, Mingkun; Xu, Jie; Xue, Zhaoguo; Fan, Zheng; Picardi, Gennaro; Fortuna, Franck; Wang, Junzhuan; Xu, Jun; Shi, Yi; Chen, Kunji; Roca i Cabarrocas, Pere, 2014, In-plane epitaxial growth of silicon nanowires and junction formation on Si(100) substrates., Nano Letters, 14(11), pp 6469-6474 (2014)
Wei,Xiaoxu;Yu ,Zhihao; Wang Junzhuan et.al. 2014, Mo-O bond doping and related-defect assisted enhancement of photoluminescence in monolayer MoS2, AIP Advances, 4, p 123004 2014
Yu, Linwei; Misra, Soumyadeep; Wang, Junzhuan; Qian, Shengyi; Foldyna, Martin; Xu, Jun; Shi, Yi; Johnson, Erik; Cabarrocas, Pere Roca I, Understanding light harvesting in radial junction amorphous silicon thin film solar cells., Scientific Reports, 4, pp 4357-4357 (2014)
Wang Junzhuan, L.Y. Yu, S. Abolmasov and P. R. i Cabarrocas, “Strong Visible and Near-infrared Electroluminescence and Formation Process in Si-Rich Polymorphous Silicon Carbon”, Journal of Applied Physics 111,053108 (2012)
Wang Junzhuan, V. Suendo, A. Abramov, L.W. Yu and P. R.i Cabarrocas, “Strongly enhanced tunable photoluminescence in polymorphous silicon carbon thin films via excitation-transfer mechanism”, Applied Physics Letter 97, 221113 (2010)
Wang Junzhuan, Y. Xia, Y.Shi, Z.Q.Shi, L.Pu, R.Zhang, Y.D.Zheng, Z.S.Tao, and F.Lu ,“1.54 μm photoluminescence emission and oxygen vacancy as sensitizer in Er-doped HfO2 films” Applied Physics Letter 91, 191115 (2007)
Wang Junzhuan, Z.Q. Shi, Y. Shi,L. Pu, L.J.Pan, R. Zhang, Y.D. Zheng, Z.S. Tao, and F. Lu, “Broad excitation of Er luminescence in Er-doped HfO2 films”, Applied Physics A 94, 399 (2009)
wang junzhuan; yang xinxin; wei xiaoxu; yu linwei; shi yi, 2013, Enhanced Crystallization and Sensitization of Si Nanocrystals in Al2O3:Er/Si:Er Multilayers, Chinese Physics Letters, 30, p 117801 (2013)
PL enhancement of MoS2 by Au nanoparticles
,Acta Physica Sinica, 63(21), (2014)
Wei X X, Yu Z H,Cheng ying, wang junzhuan, shi yi
Comparative study on strain induced electrical properties modulation of Si p-n junctions
Wu Wangran,Pu Yu,Wang Junzhuan,Xu Xiangming,Sun Jiabao,Yuan Zhe,Shi, Yi
Applied Physics Letters 102,093502(2013)