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Study of LED Thermal Resistance and TIM Evaluation Using LEDs With Built-in Sensor, IEEE Photonics Technology Letters, vol. 29, pp. 1856-1859, Nov 1 2017.
（Wang XL, Zhou YG*, Tian RB, Liu B, Xie ZL, Zhang R, Zheng YD）

In-Situ Measurement of Junction Temperature and Light Intensity of Light Emitting Diodes With an Internal Sensor Unit,IEEE ELECTRON DEVICE LETTERS, vol. 36, pp. 1082-1084, Oct. 2015
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Gate leakage in AlGaN/GaN HEMTs and its suppression by optimization of MOCVD growth, PHYSICA STATUS SOLIDI C, Vol 2, No 7, pp.2663-2667, 2005
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Correlation of in-situ reflectance spectra and resistivity of GaN/Al2O3 interfacial layer in metalorganic chemical vapor deposition,JOURNAL OF ELECTRONIC MATERIALS，Vol. 34, No. 1, pp. 112-118, JAN 2005
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Investigation of the polarization-induced charges in modulation-doped AlxGa1-xN/GaN heterostructures through capacitance-voltage profiling and simulation,JAPANESE JOURNAL OF APPLIED PHYSICS PART 1， Vol. 41, No. 4B, pp. 2531-2535, APR 2002
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Gas phase parasitic reactions and Al incorporation efficiency in light radiation heating, low-pressure metal-organic chemical vapor deposition of AlGaN,MATERIALS LETTERS, vol. 45, no.6, pp 331-335, Oct 2000
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High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment,IEEE ELECTRON DEVICE LETTERS, Vol. 26, No. 7, pp. 435-437, Jul 2005
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AlGaN-GaN double-channel HEMTs,IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 52, No. 4, pp. 438-446, Apr 2005
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