领域：高端装备制造产业 学校：南京大学职称：教授
氮化物半导体分子束外延生长（MBE）技术
氮化物纳米结构、量子阱、超晶格等物理与器件
AlGaN材料及深紫外发光器件（DUV-LED)
传统GaAs系量子级联激光器（QCL）及新型GaN 系QCL
...
具体了解该专家信息，请致电：027-87555799 邮箱 haizhi@uipplus.com
1. Li Wang, Tsung-Tse Lin, Ke Wang*, Thomas Grange, Stefan Birner & Hideki Hirayama, “Short-period scattering-assisted terahertz quantum cascade lasers operating at high temperatures”, Scientific Reports 9, 9446 (2019)
2. T.T. Lin, L. Wang, K. Wang*and H. Hirayama, “Optimization of terahertz quantum cascade lasers by suppressing carrier leakage channel via high-energy state”, Appl. Phys. Express.11, 112702 (2018)
3. Ke Wang, T. Grange, T. T. Lin, L. Wang, Z. Jéhn, S. Birner, J. Yun, W. Terashima and H. Hirayama, “Broadening mechanisms and self-consistent gain calculations for GaN quantum cascade laser structures”, Appl. Phys. Lett.113, 061109 (2018)
4. K. Wang, T. T. Lin, L. Wang, W. Terashima, and H. Hirayama, “Controlling loss of waveguides for potential GaN terahertz quantum cascade lasers by tuning the plasma frequency of doped layers”, J. J. Appl. Phys.57, 081001 (2018)
5. K. Wang,D. Imai, K. Kusakabe, A. Yoshikawa, “Leak path passivation by in-situ Al-N for InGaN solar cells operating at wavelengths up to 570 nm”, Appl. Phys. Lett.108, 092105(2016)
6. K. Wang, D. Imai, K. Kusakabe, A. Yoshikawa, “Proposal of leak path passivation for InGaN solar cells to reduce the leakage current”, Appl. Phys. Lett.108, 042108(2016)
7. K. Wang, T. Araki, M. Takeuchi, E. Yoon, Y. Nanishi, “Selective growth of N-polar InN through an in situ AlN mask on a sapphire substrate", Appl. Phys. Lett. 104, 032108 (2014)
8. K. Wang, T. Araki, K. M. Yu, T. Katsuki, M. A. Mayer, E. Alarcon Llado, J. W. Ager III, W. Walukiewicz and Y. Nanishi, “P-type InGaN across the entire alloy composition range”, Appl. Phys. Lett. 102, 102111 (2013)
9. K. Wang,N. Miller, R. Iwamoto, T. Yamaguchi, M. A. Mayer, T. Araki, Y. Nanishi, K. M. Yu, E. E. Haller, W. Walukiewicz, J. W. Ager III, “Mg doped InN and confirmation of free holes in InN”, Appl. Phys. Lett. 98., 042104 (2011)
10. K. Wang,K. P. O’Donnell, B. Hourahine, R. W. Martin, I. M. Watson, K. Lorenz, and E. Alves, “Luminescence of Eu ions in AlxGa1-xN across the entire alloy composition range”, Physical. Review. B. 80,125206 (2009)
11. K. Wang,R.W. Martin, E. Nogales, P.R. Edwards, K.P. O’Donnell, K. Lorenz, E. Alves, and I.M. Watson, “Cathodoluminescence of rare earth implanted AlInN”, Appl. Phys. Lett. 89, 131912 (2006)
12. K. Wang, R.W. Martin, K.P. O'Donnell, V. Katchkanov, E. Nogales, K. Lorenz, E. Alves, S. Ruffenach and O. Briot, “Selectively excited photoluminescence from Eu-implanted GaN”, Appl. Phys. Lett. 87,112107 (2005)
