领域：高端装备制造产业 学校：南京大学职称：教授
1. GaN基高功率电子器件；2.宽禁带半导体紫外探测器件； 3.新型氧化物透明薄膜晶体管与电路。
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具体了解该专家信息，请致电：027-87555799 邮箱 haizhi@uipplus.com
Dong Zhou, Fei Liu, Hai Lu, Dunjun Chen, Fangfang Ren, Rong Zhang, Youdou Zheng, “High-Temperature Single Photon Detection Performance of 4H-SiC Avalanche Photodiodes.” IEEE Photonics Technology Letters, vol. 26, no. 11, pp. 1136-1138, 2014.
Xiaoming Huang, Chenfei Wu, Hai Lu, Fangfang Ren, Dunjun Chen, Rong Zhang, and Youdou Zheng, “Enhanced bias stress stability of amorphous indium-gallium-zinc oxide thin film transistors by inserting ultra-thin InGaZnO:N layer at the channel/gate insulator interface.” Appl. Phys. Lett. vol. 102, no. 19, pp. 193505, 2013.
G. S. Wang, H. Lu, D. J. Chen, R. Zhang, and Y. D. Zheng, “High quantum efficiency GaN-based p-i-n photodetectors prepared on patterned sapphire substrates,” IEEE Photon. Technol. Lett., vol. 25, pp. 652, 2013.
Feng Xie, Hai Lu, Dunjun Chen, Xiaoli Ji, Feng Yan, Rong Zhang, Youdou Zheng, Liang Li, and Jianjun Zhou; “Ultra-Low Dark Current AlGaN-Based Solar-Blind Metal–Semiconductor–Metal Photodetectors for High-Temperature Applications.” IEEE Sensors Journal, vol. 12, no. 6, pp. 2086, 2012.
Feng Xie, Hai Lu, Dunjun Chen, Fangfang Ren, Rong Zhang, and Youdou Zheng; “Bias-Selective Dual-Operation-Mode Ultraviolet Schottky-Barrier Photodetectors Fabricated on High-Resistivity Homoepitaxial GaN” IEEE Photonics Technology Letters, vol. 24, no. 24, pp. 2203, 2012.
Xiaoming Huang, Chenfei Wu, Hai Lu, Fangfang Ren, Qingyu Xu, Rong Zhang, and Youdou Zheng “Electrical instability of amorphous indium-gallium-zinc oxide thin film transistors under monochromatic light illumination.” Appl. Phys. Lett., vol. 100, no. 24, pp. 243505, 2012.
F. Xie, Hai Lu, D. J. Chen, X. Q. Xiu, XQ, H. Zhao, R. Zhang, Y. D. Zheng; “Metal-Semiconductor-Metal Ultraviolet Avalanche Photodiodes Fabricated on Bulk GaN Substrate.” IEEE ELECTRON DEVICE LETTERS (2011), 32 (9), 1260-1262.
L. H. Fu, Hai Lu, D. J. Chen, R. Zhang, Y. D. Zheng, T. S. Chen, K. Wei, X. Y. Liu; “Field-dependent carrier trapping induced kink effect in AlGaN/GaN high electron mobility transistors.” APPLIED PHYSICS LETTERS (2011), 98 (17), 173508.
D. W. Yan, Hai Lu, D. S. Cao, D. J. Chen, R. Zhang, Y. D. Zheng; “On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors. ” APPLIED PHYSICS LETTERS (2010) 97 (15), 153503.
D. W. Yan, Hai Lu, D. J. Chen, R. Zhang, Y. D. Zheng; “Forward tunneling current in GaN-based blue light-emitting diodes.” APPLIED PHYSICS LETTERS (2010), 96(8), 083504.
