领域：高端装备制造产业 学校：南京大学职称：教授
1.宽带隙半导体材料及异质结构；2.III族氮化物半导体光电子器件；3.半导体固态照明技术
...
具体了解该专家信息，请致电：027-87555799 邮箱 haizhi@uipplus.com
1.Zhe Zhuang , Xu Guo , Bin Liu* , Fengrui Hu , Yi Li , Tao Tao , Jiangping Dai , Ting Zhi ,Zili Xie , Peng Chen , Dunjun Chen , Haixiong Ge , Xiaoyong Wang , Min Xiao , Yi Shi , Youdou Zheng , and Rong Zhang *High Color Rendering Index Hybrid III-Nitride/Nanocrystals White Light-Emitting Diodes (封面文章) ，Advanced Functional Materials, 26(1), 36–43(2016).
2. Ting Zhi, Tao Tao, Bin Liu*, Zhe Zhuang, Jiangping Dai, Yi Li, Guogang Zhang, Zili Xie, Peng Chen, Rong Zhang, Polarized Emission from InGaN/GaN Single Nanorod Light-emitting Diode，IEEE Photonic Tech. Lett. 28(7),721-724(2016).
3. Zhe Zhuang, Xu Guo, Bin Liu*, Fengrui Hu, Jiangping Dai,Yun Zhang, Yi Li, Tao Tao, Ting Zhi, Zili Xie, Haixiong Ge, Xiaoyong Wang, Min Xiao, Tao Wang, Yi Shi,Youdou Zheng and Rong Zhang*, Great enhancement in the excitonic recombination and light extraction of highly ordered InGaN/GaN elliptic nanorod arrays on a wafer scale(封面文章), Nanotechnology 27: 015301 (2015).
4. Z.Zhuang,X. Guo,G. G. Zhang, B. Liu*, R. Zhang, T. Zhi, T. Tao, H. X. Ge, F. F. Ren, Z. L. Xie; Y. D. Zheng. Large-scale fabrication and luminescence properties of GaN nanostructures by a soft UV-curing nanoimprint lithography(封面文章). Nanotechnology 24(40), 405303 (2013).
5. B. Liu, R. Smith, J. Bai, Y. P. Kong, T. Wang, Great emission enhancement and excitonic recombination dynamics of InGaN/GaN nanorod structures, Appl. Phys. Lett. 103, 101108 (2013).
6. R. Smith, B. Liu, J. Bai, T. Wang, Hybrid III-nitride/organic semiconductor nanostructure with high efficiency nonradiative energy transfer for white light emitters, Nano Lett. 13 (7), 3042–3047(2013).
7. B.Liu*, R.Zhang, J.G.Zheng, X. L. Ji, D. Y. Fu, Z. L. Xie, D. J. Chen, P. Chen, R. L. Jiang, Y. D. Zheng, Composition pulling effect and strain relief mechanism in AlGaN/AlN distributed Bragg reflectors, Appl. Phys. Lett. 98(26),261916 (2011).
8. B. Liu, J. Y. Kong, R. Zhang, Z. L. Xie, D. Y. Fu, X. Q. Xiu, P. Chen, H. Lu, P. Han, Y. D. Zheng, and S. M. Zhou, Polarization and temperature dependence of photoluminescence of m-plane GaN grown on LiAlO2 (100) substrate, Appl. Phys. Lett. 95, 061905 (2009).
9. B. Liu, R. Zhang, Z. L. Xie, J. Y. Kong, C. X. Liu, J. Yao, Q. J. Liu, Z. Zhang, D. Y. Fu, X. Q. Xiu, P. Chen, P. Han, Y. Shi, Y. D. Zheng，S. M. Zhou, G.. Edwards, Anisotropic crystallographic properties, strain and their effects on band structure of m-plane GaN on LiAlO2(100). Applied Physics Letters 92，261906 (2008).
10. B. Liu, R. Zhang, C. X. Liu, Z. L. Xie, J. Y. Kong, X. Q. Xiu, L. Li, H. Lu, P. Han, S.L. Gu, Y. Shi, Y. D. Zheng, J. Zhou and S. M. Zhou, Non-polar m-plane GaN thin film and InGaN/GaN light-emitting diodes on LiAlO2 (100) substrates, Applied Physics Letters 91, 253506 (2007).
