Shengfen Chiu, Yue Xu, Xiaoli Ji*, et al“An advanced tunnel oxide layer process for 65nm NOR floating-gate flash memories” Semicond.Sci.Technol. 30 (2015) 105032.

Ying Zhou, Xiaoli Ji*, et al. Impact of SiNx passivation on the surface properties of InGaAs photo-detectors; Journal of Applied Physics 118,034507 (2015).

Xiaoli Ji, Chunbo Wu, Yue Xu，Feng Yan；The promising multi-bit/level programming operations for nano-scaled SONOS memory; Microelectronics Reliability 54,119 (2014).

Xiaoli Ji , Baiqing Liu, Hengjing Tang, Xuelin Yang, Xue Li, HaiMei Gong, Bo Shen, Ping Han and Feng Yan. 2.6 m MBE grown InGaAs detectors with dark current of SRH and TAT; AIP Advance 4,087135 (2014)

Jianguan Chang, Xiaoli Ji*, et al.; Impact of various silicide techniques on SiGe source–drain series resistance and mobility of pMOSFETs; Semicond. Sci. Technol. 28 ,115009 (2013)

Xiaoli Ji, Yimin Liao, Chenxin Zhu, Jianguang Chang, Feng Yan, Yi Shi;The energy distribution of NBTI-induced hole traps in the Si band gap in PNO pMOSFETsIEEE International Reliability Physics Symposium 1(2013).

Xiaoli Ji, Baiqing Liu, Yue Xu, Hengjing Tang, Xue Li, HaiMei Gong, Bo Shen, Xuelin Yang, Ping Han, and Feng Yan;Deep-level traps induced dark currents in extended wavelength InxGa1xAs/InP
photodetector Journal of Applied Physics 114, 224502 (2013).

Xiang Li,Chenxin Zhu,Xi Zhu,Zhihuang Xu,Xinxin Zhuang,Xiaoli Jiand Feng Yan; Background limited ultraviolet photodetectors of solar-blind ultraviolet detection;APPLIED PHYSICS LETTERS 103, 171110 (2013).

Xiaoli Ji, Yiming Liao, Feng Yan, Chenxin Zhu, Yi Shi,Physical understanding of negative bias temperature instability below room temperature Journal of Applied Physics 112,104514 (2012).

Xiaoli Ji, Yimin Liao,Feng Yan ,Yi Shi，Guang Zhang and Qiang Guo ；The physical mechanisms of IG Random Telegraph Noise in deeply scaled pMOSFETs IEEE International Reliability Physics Symposium 5（2012）.