1996.9—2000.7 中国 华中科技大学 电子科学与技术系 学士
2000.9—2003.7 中国 中国科学院半导体研究所 固体电与微电子学专业 硕士
2003.8—2005.5 美国 南卡罗莱纳大学 电子工程专业 硕士
2005.6—2009.12 美国 北卡罗莱纳州立大学 电子工程专业 博士

2007.5—2007.8 美国 锐（Cree）公司，实习
2009.5—2009.8，美国 橡树岭国家实验室，实习
2010.2—2013.12 美国 德州仪器公司 器件设计工程师
2014.1—至今 中国 湖南大学 教授

1. L. Liao, J. Wang, S. Tang, Z. Shuai, X. Yin, J. Shen, A New Proportional Base Drive Technique for SiC Bipolar Junction Transistor, IEEE Transactions on Power Electronics, 2016.
2. Shiwei Liang, Jun Wang, Linfeng Deng, Yize Shi, Xin Yin, and Z. John Shen, "An Improved Proportional Base Driver for Minimizing Driver Power Consumption of SiC BJT over Wide Current and Temperature Range," IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 7, no. 3, pp. 1727-1735, Sept. 2019.
3. J. Wang, S. Xu, J. Korec, “Power MOSFET with Integrated Gate Resistor and Diode-Connected MOSFET”, United States Patent 8614480.
4. Jun Wang, Shiwei Liang, Linfeng Deng, Xin Yin, and Z. John Shen, "An Improved SPICE Model of SiC BJT Incorporating Surface Recombination Effect," IEEE Transactions on Power Electronics, vol. 34, no. 7, pp. 6794-6802, 2019.
5. J. Wang, X. Jiang, Z. Li and J. Shen, "Short-Circuit Ruggedness and Failure Mechanisms of Si/SiC Hybrid Switch", IEEE Transactions on Power Electronics, 2019, vol 34, no. 3, pp. 2771-2780.
6.J. Wang, Z. Li, X. Jiang, C. Zeng and J. Shen, "Gate Control Optimization of Si/SiC Hybrid Switch for Junction Temperature Balance and Power Loss Reduction", IEEE Transactions on Power Electronics, February 2019, vol 34, no. 2, pp. 1744-1754.
7. J. Wang, A. Q. Huang, W. Sung, Y. Liu, B. J. Baliga, “Smart grid technologies,” IEEE Industrial Electronics Magazine, vol. 2, no. 2, Jun. 2009, pp. 16-23.
8. J. Wang, A. Q. Huang, “Design and Characterization of High Voltage Silicon Carbide Emitter Turn-off Thyristor (SiC ETO),” IEEE Transaction on Power Electronics, vol. 24, no. 5, May 2009, pp. 1189-1197.
9. J. Wang, T. Zhao, A. Q. Huang, R. Callanan, A. Agarwal, “Characterization, Modeling and Application of 10 kV SiC MOSFET,” IEEE Transactions on Electron Devices, vol. 55, no. 8, pp. 1798-1806, Aug. 2008.
10. J. Wang, A. Q. Huang, S. Atcitty, I. Gyuk, “Silicon Carbide Emitter Turn-off Thyristor (SiC ETO),” International Journal of Power Management Electronics, Volume 2008, Article ID 891027, 5 pages, 2008.
11. J. Wang, J. Li, T. Zhao, A. Q. Huang, R. Callanan, F. Husna, A. Agarwal, “10 kV SiC MOSFET Based Boost Converter,” IEEE Transaction on Industry Applications, vol. 45, no. 6, pp. 2056-2063, September, 2009.
12. J. Wang, D. Zhao, Y. Sun, Wang, S. Zhang, H. Yang, S. Zhou and M. Wu, “Thermal annealing behavior of Pt on n-GaN Schottky contacts,” JOURNAL OF PHYSICS D: APPLIED PHYSICS, Vol. 36, 2003, pp. 1018-1022.
13. J. Wang, D. Zhao, Z. Liu, G. Feng, J. Zhu, X. Shen, B. Zhang and H. Yang, “Metal-semiconductor-metal ultraviolet photodetector based on GaN,” Science in China (Series G), Vol. 46, No. 2, 2003, pp. 198-203.
14. Q. Zhang, J. Wang, A. Agarwal, J. Palmour, A. Q. Huang, et al., “Design and Characterization of High Voltage 4H-SiC p-IGBTs,” IEEE Transactions on Electron Devices, vol. 55, No. 8, Aug. 2008, pp. 1912-1919.

获2项美国发明专利和1项日本发明专利，5项中国专利。