领域：新材料产业 学校：南京大学职称：教授
1. 基于III族氮化物半导体微纳结构的半导体光电子学与等离激元光子学研究；
2. 基于III族氮化物半导体的固态照明技术研究；
3. 基于III族氮化物半导体的固体电子学与功率电子器件研究；
4. Si衬底上的III族氮化物半导体材料与光电子学研究；
5. GaN自支撑衬底同质外延技术及其器件研究。
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具体了解该专家信息，请致电：027-87555799 邮箱 haizhi@uipplus.com
1. Ningze Zhuo, Na Zhang, Peng Chen* and Haibo Wang*, Enhancement of efficiency and CCT uniformity for red phosphor thin films, red LEDs and laminated white LEDs based on near-ultraviolet LEDs using MgO nanoparticles, RSC Advances，9,28291, 2019
2. Ningze Zhuo, Na Zhang, Teng Jiang, Peng Chen* and Haibo Wang*, Effect of particle sizes and mass ratios of a phosphor on light color performance of a green phosphor thin film and a laminated white lightemitting diode, RSC Advances，9,27424, 2019
3. Jiang, Fulong; Liu, Yaying; Chen, Peng*; et al.,The Study on the Droop Effect in the InGaN/AlGaInN MQWs With Lattice-Matched AlGaN/InGaN Superlattices Barrier by Highly Excited Photoluminescence Measurementctions
IEEE PHOTONICS JOURNAL，卷:10，期:2，文献号: 8200509，APR 2018
4. Yang, G. F.; Chen, P.*; Wang, M. Y.; et al., Selective epitaxy of InGaN/GaN multiple quantum wells on GaN side facets, PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES Volume: 45 Pages: 61-65 Published: AUG 2012
5. P. Chen, A. Chen，S. J. Chua, and J. N. Tan，Growth and Optical Properties of Highly Uniform and Periodic InGaN Nanostructures，ADVANCED MATERIALS, Vol 19(13), 1707-1710, 2007
6. P. Chen, S. J. Chua, and J. N. Tan, High-density InGaN nanodots grown on pretreated GaN surfaces, APPLIED PHYSICS LETTERS, 89,023114, 2006
7. P. Chen, S. J. Chua, Y. D. Wang, M. S. Sander, and C. G. Fonstad, InGaN Nanorings and Nanodots by Selective Area Epitaxy, APPLIED PHYSICS LETTERS, 87,143111, 2005
8. H.W.Choi, K.N.Hui, P.Lai, P.Chen, X.H.Zhang, S.Tripathy, J.H.Teng, and S.J.Chua, Lasing in GaN microdisks pivoted on Si, Appl. Phys. Lett. 89,211101, 2006
