教育背景
2006.09-2010.06 电子科技大学,材料物理与化学专业,博士学位
2004.09-2006.06 电子科技大学,材料物理与化学专业,硕士学位
2000.09-2004.06 电子科技大学,电子科学与技术专业,学士学位
工作经历
2012.07- 电子科技大学,副教授
2011.12-2012.11 德国亥姆霍兹学会德累斯顿研究所,访问学者
2010.07-2012.06 电子科技大学,讲师
项目课题经历
论文、成果、著作等
W. B. Luo, J. Zhu, Y. R. Li, X. P. Wang, D. Zhao, J. Xiong, and Y. Zhang. Effects of chemical fluctuations on microstructures and properties of multiferroic BiFeO3 thin films. Appl. Phys. Lett., 2007, 91, 082501.
W. B. Luo, J. Zhu, Y. R. Li, X. P. Wang, and Y. Zhang. Integration of (208) oriented epitaxial Hf-doped Bi4Ti3O12 with (0002) GaN using SrTiO3/TiO2 buffer layer. J. Appl. Phys., 2009, 105: 104102.
W. B. Luo, J. Zhu, H. Chen, X. P. Wang, Y. Zhang, and Y. R. Li. Improved crystalline properties of laser molecular beam epitaxy grown SrTiO3 by rutile TiO2 layer on hexagonal GaN. J. Appl. Phys. 2009, 106: 104120.
W. B. Luo, J. Zhu, Y. R. Li, Y. Zhang, and H. Chen. Epitaxial growth and ferroelectricity of BaTiO3 on SrRuO3/TiO2 buffered GaN. Ferroelectrics, 2010,406:46-61.
W. B. Luo, ; Zhu, J.; Zeng, H. Z, et al. Effects of SrTiO(3)/TiO(2) buffer layer on structural and electrical properties of BiFeO(3) thin films grown on GaN (0002), J. Appl. Phys. 2011, 109: 104108.
Luo, WB; Jing, J; Shuai, Y ; Zhu, J; Zhang, WL ; Zhou, S; Gemming, S; Du, N; Schmidt, H, Epitaxial growth of SrTiO3 (0 0 1) films on multilayer buffered GaN (0 0 0 2) by pulsed laser deposition, JOURNAL OF PHYSICS D-APPLIED PHYSICS. 2013, 46(6): 065307
Luo, WB; Jing, J; Shuai, Y ; Zhu, J; Zhang, WL ; Zhou, S; Gemming, S; Du, N; Schmidt, H, Effects of the TiO2 buffer thickness on SrTiO3 (111) epitaxial films grown on GaN (0002), J. Appl. Phys. 2013, 113: 154103
Peng, QX ; Luo, WB; Meng, J ;; Fu, WY ;; Qing, X ;; Sun, XY ;; Shuai, Y ;; Wu, CG ;; Zhang, WL , A new method of depositing high figure-of-merit porous PZT pyroelectric thick film using [001]-oriented PZT nanorod by electrophoresis deposition, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2014, 25:297-302
Peng, QX; Luo, WB; Wu, CG ; Sun, XY; Li, P Chen, XY., The fabrication and pyroelectric properties of single crystalline PZT nanorod synthesized by hydrothermal reaction, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2014, 25, 1627-1632
专利、著作版权等
ABO3/MgO/GaN异质结构及其制备方法. 中国, 发明专利, 申请号:200910058648.3. CN101527314
ABO3/TiO2/MgO/Ⅲ-V族氮化物半导体异质结构及制备方法 中国,发明专利,CN101826550
一种补偿型热释电红外单元探测器,中国, 发明专利, CN103474502
一种厚膜热释电敏感元及其制备方法.中国,发明专利, 201510109992.6
声明:本站专家信息来源于各高校官网。