1985.09－1988.04 电子科技大学，半导体专业，硕士学位 1981.09－1985.07 北京理工大学，半导体专业，学士学位

1988.05－1996.05 电子科技大学微电子研究所，任助教、助研、副教授 1996.05－1999.11 美国Virginia理工大学，任Visiting Professor 1999.11－2001.11 电子科技大学微电子科学与工程系，任副教授 2000.07－2001.11 电子科技大学微电子科学与工程系，教授、系主任助理 2001.11－2015.12 电子科技大学微电子与固体电子学院副院长，教授 2014.07－现在 电子科技大学集成电路研究中心主任，教授

[1].Equivalent substrate model for lateral super junction device. IEEE Transactions on Electron Devices, v 61, n 2, p 525-532, February 2014 [2].Analytical Modeling for a Novel Triple RESURF LDMOS with N-Top Layer. IEEE Transactions on Electron Devices, v 62, n 9, p 2933-2939, September 1, 2015 [3].Ultralow ON-Resistance SOI LDMOS With Three Separated Gates and High-k Dielectric. IEEE Transactions on Electron Devices. 2016, 63(9): 3804-3807 [4].Analytical Model and Characteristics for High-voltage Controllable C-SenseFET.IEEE Transactions on Power Electronics. 2016, VOL. 31, NO. 6 [5].An advanced spread spectrum architecture using pseudorandom modulation to improve EMI in class D amplifier. IEEE Transactions on Power Electronics, v 26, n 2, p 638-646, 2011. [6].A 1.6-V 25-μA 5-ppm/°C curvature-compensated bandgap reference. IEEE Transactions on Circuits and Systems I: Regular Papers, v 59, n 4, p 677-84, April 2012 [7].Digital Error Corrector for Phase Lead-Compensated Buck Converter in DVS Applications. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, Vol.21, No.9, pp. 1747 - 1751, Sept. 2013. [8].7.6 V Threshold Voltage High-Performance Normally-Off Al 2 O 3 /GaN MOSFET Achieved by Interface Charge Engineering. IEEE Electron Device Letters, 2016, 37(2):165-168. [9].High Peak Current MOS Gate-Triggered Thyristor With Fast Turn-On Characteristics for Solid-State Closing Switch Applications. IEEE Electron Device Letters, 2015, 37(2):1-1. [10].An Accumulation Mode RF Laterally Double Diffused MOSFET with Improved Performance. IEEE Electron Device Letters,v 37,n 10,October 2016 （1） Power Semiconductor Devices and Smart Power IC，自编讲义 （2） 集成电路电源完整性分析与管理，译著，电子工业出版社，2013年 （3） 功率半导体器件电场优化技术，专著，电子科技大学出版社，2016年 ......