1， 基于场致光发射机理的MOS栅控高效硅发光新结构研究 （国家级项目立项） 巧妙地利用MOSFET栅控原理，设计出了栅控高效硅发光器件，通过栅极引入外加电场，有效调控了硅光源的PN结空间电场，让PN结空间电场分布达到最佳，从而有效地将点击穿区扩展到面击穿，大大提高了发光效率。 2， 基于载流子可控场致光发射硅器件电光调制技术基础研究（国家级项目立项） 通过实现硅波导折射率和吸收系数的调制，借助硅材料特有的半导体特性，从根本上克服了硅波导本身存在较大的结构双折射缺点，在硅波导上实现了调制功能，同时解决了硅基类MOS电光调制器件结构，及器件加工工艺与硅IC兼容的难题，为实现多端口可控硅电光调制，高频响应、集成化全硅电光调制技术提供了有力支撑。 3， 与全硅光电集成电路兼容的甚短间距片上光互联（国家级项目立项） 突破了工艺兼容瓶颈，实现了硅IC兼容片上光互连技术，让新型硅电光调制器加工工艺嵌入到CMOS工艺中，成为高速光互连硅IC加工的一部分，为未来片内光互连发展带来新一轮技术变革。

[1] Z. Zhang, K. Xu*, J. Yuan, Y. Wang, K. Ogudo, C. Viana, J. Polleux, Q. Yu, L. Snyman, Y. Wang, and R. Hu；Silicon light-emitting device for high speed analog-to-digital conversion; Journal of Optoelectronics and Advanced Materials, Vol. 18, No. 9-10, September - October 2016, p. 737 - 744 [2] K. Xu*, D. Cheng, and X. Huang;Modal characteristics of coupled resonator vertical cavity laser diode; Advances in Optoelectronic Materials (AOM) Volume 4, 2016 [3] C. Zhang, S. Liu, K. Xu, J. Wei, R. Ye, W. Sun*, W. Su, A. Zhang, S. Ma, F. Lin, and G. Sun;A novel high latch-up immunity electrostatic discharge protection device for power rail in high-voltage ICs; IEEE Transactions on Device and Materials Reliability, vol. 16, no. 2, pp. 266-268, 2016 [4] K. Xu*, K. Ogudo, J. Polleux, C. Viana, Z. Ma. Z. Li, Q. Yu, G. Li, and L. Snyman;Light-emitting devices in Si CMOS and RF bipolar integrated circuits; LEUKOS, the journal of the Illuminating Engineering Society, vol. 12, no. 4, pp. 203-212, 2016 (2016 SCI IF: 2.167) [5] K. Xu*, Z. Zhang, Q. Yu, and Z. Wen;Field-effect electroluminescence spectra of reverse-biased PN Junctions in silicon device for microdisplay; IEEE/OSA Journal of Display Technology, vol. 12, no. 2, pp. 115-121, 2016 (2016 SCI IF: 1.925) [6] K. Xu*, S. Liu, J. Zhao, W. Sun, and G. Li;A new silicon LED concept for future opto-coupler system applications in short-distance; Optik-International Journal for Light and Electron Optics, vol. 127, no. 5, pp. 2895-2897, 2016 [7] K. Xu*, S. Liu, W. Sun, Z. Ma, Z. Li, Q. Yu, and G. Li;Design and fabrication of a monolithic optoelectronic integrated Si CMOS LED based on hot-carrier effect; IEEE Journal of Selected Topics in Quantum Electronics, vol. 22, no. 6, 2000508, November/December 2016 (2016 SCI IF: 3.466) [8] K. Xu*;Integrated silicon directly modulated light source using P-Well in standard CMOS technology; IEEE Sensors Journal, vol. 16, no. 16, pp. 6184-6191, 2016 (2016 SCI IF: 1.889) [9] K. Xu*, Z. Zhang, and Z. Zhang;Structural and optical properties of silicon metal-oxide-semiconductor light-emitting devices; Journal of Nanophotonics, vol. 10, no. 1, 016002, Jan-Mar 2016 (2016 SCI IF: 1.488) [10] K. Xu*, L. Snyman, J. Polleux, K. Ogudo, C. Viana, Q. Yu, and G. Li;Silicon LEDs toward high frequency on-chip link; Optik-International Journal for Light and Electron Optics, vol. 127, no. 17, pp. 7002-7020, 2016 [11] L. Snyman, K. Xu, J. Polleux, K. Ogudo, and C. Viana;Higher intensity SiAvLEDs in a RF bipolar process through carrier energy and carrier momentum engineering; IEEE Journal of Quantum Electronics, vol. 51, no. 7, 3200110, July 2015 (2016 SCI IF: 1.843) [12] K. Xu*, Q. Yu, and G. Li;Increased efficiency of silicon light-emitting device in standard Si-CMOS technology; IEEE Journal of Quantum Electronics, vol. 51, no. 8, 3000106, August 2015 (2016 SCI IF: 1.843) [13] K. Xu*, H. Liu, and Z. Zhang;Gate-controlled diode structure based electro-optical interfaces in standard Silicon-CMOS integrated circuitry; Applied Optics, vol. 54, iss. 21, pp. 6420-6424, 2015 (2016 SCI IF: 1.598 [14] K. Xu*, H. Liu, Q. Yu, Z. Wen, and G. Li;On the electrical and optical characteristics of reverse-biased silicon p-n junctions embedded in a metal-oxide-semiconductor field-effect-transistor device; Journal of Optoelectronics and Advanced Materials, vol. 17, no. 11-12, pp. 1680-1688, 2015 [15] K. Xu*, S. Liu, J. Zhao, W. Sun, and G. Li;Analysis of simulation of multi-terminal electro-optic modulator based on p-n junction in reverse bias; Optical Engineering, vol. 54, no. 5, 057104, 2015 [16] K. Xu*, S. Liu, J. Zhao, Q. Yu, W. Sun, and G. Li;Opportunities for employing IGBT in photo-switch based on silicon avalanche LEDs; International Journal of New Computer Architectures and their Applications, vol. 5, no. 3, pp. 119-126, 2015 [17] K. Xu*, L. Snyman, J. Polleux, H. Chen, and G. Li;Silicon light-emitting device with application in on-chip micro-opto-electro-mechanical and chemical-opto-electro micro systems; International Journal of Materials, Mechanics and Manufacturing, vol. 3, no. 4, pp. 282-286, 2015 [18] K. Xu* and Yang Ou;Theoretical and numerical characterization of a 40Gbps long-haul multi-channel transmission system with dispersion compensation; Digital Communications and Networks, vol. 1, iss. 3, pp. 222-228, 2015 [19] K. Xu*;On the design and optimization of three-terminal light-emitting device in silicon CMOS technology; IEEE Journal of Selected Topics in Quantum Electronics, vol. 20, no. 4, 8201208, July/Aug. 2014 [20] K. Xu* et al.;Electro-optical modulation processes in Si-PMOSFET LEDs operating in the avalanche light emission mode; IEEE Transactions on Electron Devices, vol. 61, no. 6, pp. 2085-2092, 2014 [21] K. Xu* and G. Li;Hot-carrier induced photon-emission in silicon metal-oxide-semiconductor field-effect-transistor; Journal of Physics: Conference Series, 488, 132036, 2014 XXVIII International Conference on Photonic, Electronic and Atomic Collisions (ICPEAC 2013) [22] K. Xu* and G. Li;A novel way to improve the quantum efficiency of silicon light emitting diode in a standard silicon complementary metal-oxide-semiconductor technology; Journal of Applied Physics, 113, 10, 103106, 2013 [23] K. Xu*;Current-voltage characteristics and increase in the quantum efficiency of three-terminal gate and avalanche-based silicon LEDs; Applied Optics, vol. 52, iss. 27, pp. 6669-6675, 2013 [24] K. Xu* and G. Li;Light-emitting device with monolithic integration on bulk silicon in standard complementary metal oxide semiconductor technology; Journal of Nanophotonics, vol. 7, no. 1, 073082, 2013 [25] K. Xu* and G. Li;A three terminal silicon-PMOSFET like light emitting device (LED) for optical intensity modulation; IEEE Photonics Journal, vol. 4, no. 6, pp. 2159-2168, 2012 Conference Papers [1] K. Xu, N. Ning, K. Ogudo, J. Polleux, Q. Yu, and L. Snyman;Light emission in silicon: from device physics to applications; International Workshop on Thin-films for Electronics, Electro-Optics, Energy, and Sensors, (TFE3S),2015, Invited paper [2] K. Xu, S. Wu, Z. Zhang, Q. Yu, X. Huang, Y. Wang, and J. Polleux;A perspective on high speed analogy to digital conversion with silicon light-emitting devices; in 20th OptoElectronics and Communications Conference (OECC 2015) Invited paper [3] K. Xu, B. Huang, K. Ogudo, L. Snyman, H. Chen, and G. Li;Silicon light-emitting device in standard CMOS technology; in International Photonics and Optoelectronics Meetings (POEM), OSA Technical Digest (online) (Optical Society of America, 2015). Invited paper [4] K. Xu and G. Li;A light-emitting-device (LED) with monolithic integration on bulk silicon in a standard CMOS technology; in International Photonics and Optoelectronics Meetings (POEM), OSA Technical Digest (online) (Optical Society of America, 2013. [5] K. Xu and G. Li;Silicon electro-optic modulator based on the theory of gate-controlled diode; in International Photonics and Optoelectronics Meetings (POEM), OSA Technical Digest (online) (Optical Society of America, 2013). [6] K. Xu and G. Li;The path forward: silicon electro-optical interface for modern complementary metal-oxide-semiconductor integrated circuits (CMOS ICs); in 2nd CIOMP-OSA Summer Session, OSA Technical Digest (online) (Optical Society of America, 2013). [7] K. Xu and D. Cheng;Modeling and analysis of check-in procedure by simulation; IEEE SMC 2011 [8] K. Xu;Comparison of dispersion compensation in a 40Gbps WDM optical communication system; SPIE Photonics Asia 2010，Invited paper [9] K. Xu, D. Cheng, and X. Huang;Multimode communication system used in local area network; SOPO 2009 [10] X. Huang, L. Li, K. Xu et al.;An 0.35μm/CMOS 2.4Gb/s LVDS for high-speed DAC; IEEE ASICON 2009 [11] K. Xu, D. Cheng, and K. Li;Super-high speed fiber optical communication systems design and simulation; ICAIT 2008 出版书籍章节 [1] K. Xu;Hot carrier luminescence in silicon metal oxide semiconductor field effect transistor; in Advances in Optoelectronics Research, Nova Science Publisher Inc., New York, Chapter 1, pp. 1-28, 2014 [2] K. Xu, W. Sun, K. Ogudo, L. Snyman, J. Polleux, Q. Yu, and G. Li;Silicon avalanche based light emitting diodes and their potential integration into CMOS and RF integrated circuit technology; in Advances in Optical Communication, Intech, Chapter 5, pp. 115-142, 2014