1995.02 - 2000.03，电子科技大学信息材料工程学院材料物理与化学专业，博士研究生，获工学博士学位。 1989.07 - 1992.07，中科院固体物理研究所凝聚态物理专业，硕士研究生，获理学硕士学位。 1985.09 - 1989.07，武汉大学物理系，本科，获理学学士学位。

2004.08－今，电子科技大学微电子与固体电子学院，教授。 2000.08 -2004.07，电子科技大学微电子与固体电子学院，副教授； 1997.08 - 1998.07，德国Karsruhe研究中心（FZK）,客座研究人员； 1994.07 - 2000. 07，电子科技大学信息材料工程学院，讲师； 1992.08 - 1994.07，电子科技大学信息材料工程学院，助教；

(1). Li-jun He, Chuan Li, Xing-zhao Liu*, The electrical and morphological properties of magnesium moxide/alumina bilayered thin films prepared by electron beam evaporation at oblique incidence， Appl. Surf. Sci. 292 (2014) 665– 669 (2). Xingzhao Liu*, Chao Chen, Jun Zhu, Wanli Zhang, and Yanrong Li, The modulation effects of charged dielectric thin films on two-dimensional electron gas in AlGaN/GaN heterostructure, J. Appl. Phys. 114 (2013) 027003 (3). Bingzhang Chen, Futong Chu, Xingzhao Liu, Yanrong Li, Jian Rong, Huabei Jiang, AlN-based piezoelectric micromachined ultrasonic transducer for photoacoustic imaging, Appl. Phys. Lett. 103 (2013) 031118 (4). Li-jun He, ChuanLi, Xing-zhaoLiu*, The optical properties of alumina films prepared by electron beam evaporation at oblique incidence, Materials Letters 101 (2013) 1–4 (5). Chao Chen, Xingzhao Liu*, Jihua Zhang, Benlang Tian, Hongchuan Jiang, Wanli Zhang, Yanrong Li, Threshold voltage modulation mechanism of AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors with Fluorinated Al2O3 as Gate Dielectrics, Appl. Phys. Lett. 100 (2012) 133507 (6). Chao Chen, Xingzhao Liu*, Benlang Tian, Ping Shu, Yuanfu Chen, Wanli Zhang, Hongchuan Jiang, Yanrong Li, Fabrication of Enhancement-Mode AlGaN/GaN MISHEMTs by using Fluorinated Al2O3 as Gate Dielectrics. IEEE Electron Device Letters 32 (2011) 1373-1375 (7). Y. F. Chen, X. Z. Liu*, X. W. Deng, Y. R. Li, Homoepitaxial 6H-SiC thin films by vapor-liquid-solid mechanism. Thin Solid Films 519 (2011) 5358-5363 (8).Benlang Tian, Chao Chen, Jihua Zhang, Yanrong Li, Yuanfu Chen, Xingzhao Liu*, Jianjun Zhou, Liang Li, Chen Chen, Structure and electrical characteristics of AlGaN/GaN MISHFETs with Al2O3 thin film as both surface passivation and gate dielectric, Semicondu. Sci. Technol. 26 (2011) 085023 (9). C. J. Zhang, Y. F. Chen, Z. G. Wang, B. L. Tian, C. Chen, X. W. Deng, M. Liu, Y. Zhang, X. Z. Liu, Y. R. Li, Growth and structure of MBE-grown PbTiO3 epilayers by using RF atomic oxygen source, J. Crystal Growth 312 (2010) 382-385 (10). Y.F.Chen, X.Z.Liu*, X.W.Deng,Y.R.Li, Characterization of 3C-SiC micro-pillars on Si(100) substrate grown by vapor-liquid-solid process, Thin Solid Films, 517 (2009) 2882