2000.09－2005.05 电子科技大学，微电子与固体电子专业，博士学位 1991.09－1994.03 电子科技大学，微电子与固体电子专业，硕士学位 1987.09－1991.06 四川大学，物理专业，学士学位

2011.06－ 今 微电子与固体电子学院 ，教授 2001.06－2011.06 微电子与固体电子学院 ，副教授 1994.03－2001.06 微电子与固体电子学院 ，讲师

1 .Electric field distribution in charge imbalance super junction， Acta Physica Sinica， 2. On-state breakdown model for high voltage RESURF LDMOS， Chinese Journal of Semiconductor 3. Realization of a novel 1200 V VLD double RESURF LDMOS with n-bury layer， Chinese Journal of Semiconductors 4. An integrated SOI high voltage device with a ring drain，IEEE ICCCAS 5. Dynamic-state model of NPT-IGBTs with localized lifetime control ，Chinese Journal of Semiconductors 6. High voltage LDMOS switch circuit with a D/A driver in SOI material，Chinese Journal of Semiconductors 7. A WKB solution of excess carriers in conductivity modulation base with non-uniform lifetime， Acta Physica Sinica 8. Static-state model of NPT-IGBTs with localized lifetime control，Chinese Journal of Semiconductors 9 Numerical and experimental study of localized lifetime control LIGBT by high dose He ion implantation，Chinese Journal of Semiconductors 10. Study for safe operating area of high voltage LDMOS，IEEE Proceedings of 2004 ICBEPRL， 11. A High Speed SOI LIGBT with Electronic Barrier Modulation，IEEE ISPSD 12. A charge pump with reduced current variation and mismatch in low-voltage low-power PLLs， 2013 IEEE ISPSD 13. High-voltage super-junction lateral double diffused metal oxide semiconductor with a partial lightly doped pillar， Chin. Phys. B. 14. An integrated SOI high voltage device with a ring drain, IEEE ICCCAS