毕业于国立同济大学电机系

先后在厦门大学、南京工学院及中国科学院物理研究所工作。1956年开始在电子科技大学任教。1983年任电子科技大学微电子科学与工程系系主任、微电子研究所所长。曾先后在美国俄亥俄州立大学、加州大学伯克利分校作访问学者及研究工程师，被聘为加拿大多伦多大学客座教授，英国威尔斯大学天鹅海分校高级客座教授。1999年当选中国科学院院士。

以第一或合作作者在IEEE TED、IEEE EDL、SSE等权威期刊及ISPSD等著名会议上发表了超过130篇学术论文，在固体物理等方面有著作8部，并翻译了包括俄、德语等2部译著及其它文献。[1] Xingbi Chen, Mingmin Huang. A vertical power MOSFET with an interdigitated drift region using high-k insulator[J]. IEEE Tran. Electron Devices, 2012, 59(9): 2430-2437 [2] 陈星弼. 超结器件[J]. 电力电子技术, 2008, 42(12): 2-7 [3] 陈星弼. 由半导体微电子技术引起的第一次电子革命及第二次电子革命[C]. 第十六届全国电源技术年会, 2005, 32-36 [4] Xingbi Chen, Hongqiang Yang, Min Cheng. New silicon limit of power devices[J]. Solid-State Electronics, 2002, 46: 1185-1192 [5] Xingbi Chen, Xuefeng Fan. Optimum VLD makes SPIC better and cheaper[C]. Proc. ICSICT, 2001, 104-108 [6] Xingbi Chen, K. O. Sin. Optimization of the specific on-resistance of the COOLMOS[J]*. IEEE Trans. Electron Devices, 2001, 48(2): 344-348 [7] Xingbi Chen. Theory of the switching response of CBMOST[J]. Chinese Journal of Electronics, 2001, 10(1): 1-6 [8] 陈星弼, 蒲慕名, 张瑞敏, 车俊, 尚选玉, 于庆成, 杜彭. 我的创新与财富观[J]. 中国青年科技, 2001, (2): 32-38 [9] 陈星弼. 第一次电子革命及第二次电子革命[J]. 微型电脑应用, 2000, 16(8): 5-9 [10] Xingbi Chen, Xin Wang, K. O. Sin. A novel high-voltage sustaining structure with buried oppositely doped regions[J]. IEEE Trans. Electron Devices, 2000, 47(6): 1280-1285 [11] 陈星弼. 科技为本 创新为魂——由半导体技术引起的重大革命[J]. 世界电子元器件, 2000, (6): 7-11 [12] 陈星弼. 由半导体微电子技术引起的第一次电子革命及第二次电子革命[J]. 电子科技大学学报社科版, 2000, 2(2): 20-25 [13] Xingbi Chen. Optimum design parameters for different patterns of CB-structure[J]. Chinese Journal of Electronics, 2000, 9(1): 6-11 [14] 陈星弼, 叶星宁, 唐茂成, 王新, 苏秀娣, 单成国. 新型CMOS全兼容二极管[J]. 电子科技大学学报, 1999 [15] Xingbi Chen. Breakthrough to the silicon limit of power devices (invited Paper)[J]. Proc. ICSICT, 1998, 141-144 [16] 陈星弼, 叶永萌. 对高等学校人才培养的思考和看法[J]. 中国电子学会教育分会主办, 1998, 13-15 [17] Xingbi Chen, P. A. Mawby, K. Board, C. A. T. Salama. Theory of a novel voltage sustaining layer for power devices[J]. Microelectronics Journal, 1998, 29(12): 1055-1011 [18] Xingbi Chen. Theory of a novel voltage sustaining (CB) layer for power devices[J]. Chinese Journal of Electronics, 1998, 7(3): 211-216 [19] 陈星弼. 用于灵巧功率集成电路的创新型横向器件[C]. 第二届中国西部地区微电子技术年会论文集(四川、重庆、广西、甘肃、云南六地市), 1998, 1-7 [20] Xingbi Chen, K. O. Sin, Min Zhang, Bin Wang. An analytical model for electric field distribution of positively beveled abrupt PN junctions[J]. IEEE Trans. Electron Devices, 1997, 44(5): 869-873 [21] Xingbi Chen, P. A. Mawby, C. A. T. Salama, M. S. Towers, J. Zeng, K. Board. Lateral high-voltage devices using an optimized variational lateral doping[J]. Int. J. Electronics, 1996, 80(3): 449-459 [22] 陈星弼. 半导体器件与微电子学的发展动向[C]. 当代电子, 四川省电子学会主编, 1992, 4-94 [23] 陈星弼, 曾军. 扩散平面结反偏压下的电场分布与击穿电压[J]. 电子科技大学学报, 1992, 21(5): 491-499 [24] Xingbi Chen, Bo Zhang and Zhaoji Li. Theory of optimum design of reverse-biased p-n junctions using resistive field plates and variation lateral doping[J]. Solid State Electronics, 1992, 35(9): 1365-1370 [25] 陈星弼. 结终端技术[C]. 第七届全国半导体集成技术与硅材料学术年会特邀报告, 1991 [26] Xingbi Chen. Power MOST and merged devices[C]. Proc. of congress of German Chinese Electronics, Berlin. Offenbach, 1991, 339-345 [27] 陈星弼. MOS 型功率器件[J]. 电子学报, 1990, 18(5): 97-105 [28] 陈星弼. 功率MOS及HVIC的进展[C]. 第六届全国半导体集成技术与硅材料学术年会特邀报告, 1989 [29] Xingbi Chen, Zhaoji Li and Zhongmin Li. Field profiles and breakdown voltage of elliptic cylindric abrupt junction[C]. Proc. ICSICT, 1989, 459-461 [30] Xingbi Chen. A simple description of diffused impurity distribution of an instantaneous source through a window of a mask[C]. Proc. ICSICT, 1989, 241-243 [31] Xingbi Chen. Analysis and design guideline of JTT’s used in planar technology[C]. Proc. ICSICT, 1989, 456-459 [32] Xingbi Chen. A theory of floating field limiting rings regarding the effect of surface charges[J]. Acta Electronica Sinica, Supplement, Mat, 1989, 105-112 [33] 陈星弼, 李肇基, 李忠民. 关于圆柱边界突变结的击穿电压[J]. 半导体学报,1989, 10(6): 463-466 [34] 陈星弼. 表面电荷对具有场限环的p+-n 结电场及电位分布的影响[J]. 电子学报, 1988, 16(5): 14-19 [35] 陈星弼, 杨功铭. 横向结构深结功率MOSFET漂移区的优化设计[J]. 微电子学, 1988, 18(4): 42-49 [36] 陈星弼. 场限环的简单理论[J]. 电子学报, 1988, 16(3): 6-9 [37] 陈星弼, 李肇基, 蒋旭. 高压半导体器件电场的二维数值分析[J]. 半导体学报, 1988, 9(3): 255-261 [38] 陈星弼, 李肇基, 宋志庆. 高压半导体器件电场的二维数值分析[J]. 电子科技大学学报, 1988, 17(1): 46-53 [39] Xingbi Chen, Zhiqing Song and Zhaoji Li. Optimization of the drift region of power MOSFET’s with lateral structures and deep junctions[J]. IEEE Trans. Electron Devices, 1987, 34(11): 2344-2350 [40] Xingbi Chen. Best uniform surface doping in the drift region of offset-gate power MOSFET’s with deep junction[C]. Proc. ICSICT, 1986, 383-385 [41] 陈星弼, 蒋旭. 突变平面结表面电场的近似公式[J]. 成都电讯工程学院学报, 1986, 15(3): 34-40 [42] 陈星弼. p-n+结有场板时表面电场分布的简单表示式[J]. 电子学报, 1986, 14(1): 36-43 [43] Xingbi Chen and Chenming Hu. Optimum doping profiles of power MOSFET epitaxial layer[J]. IEEE Trans. Electron Devices, 1982, 29(6): 985-987 [44] 陈星弼, 易明銧. 小注入下晶体管IC-VBE特性的指数因子的研究[J]. 物理学报, 1978, 2(1): 10-21 [45] 陈星弼. 论晶体管中电荷控制法的基础[C].四川省电子学会第二届学术年会论文集, 1964, 168-185 [46] 陈星弼. 一维不均匀介质中的镜像法[J]. 成都电讯工程学院学报, 1963, 4(3): 76-84 [47] 陈星弼. 表面复合对半导体中非平衡载流子漂移及扩散的影响[J]. 成都电讯工程学院学报, 1963, 4(?): 100 [48] 陈星弼. 关于半导体漂移三极管在饱和区工作时的储存时间问题[J]. 物理学报, 1959, 15(7): 353-367 [49] Xinjiang Lyu, Xingbi Chen. An ultralow specific ON-resistance LDMOST using charge balance by split p-gate and n-drift regions[J]. IEEE Trans. Electron Devices, 2013, 60(11): 3821-3826 [50] Moufu Kong, Xingbi Chen. Study on dual channel n-p-LDMOS power devices with three terminals[J]. IEEE Trans. Electron Devices, 2013, 60(10): 3508-3514 [51] Zhi Lin, Hao Hu, Junji Cheng and Xingbi Chen. A Versatile Low-cost Smart Power Technology Platform for Applications over Broad Current and Voltage Ranges[C]. Proc. BCTM, 2013, 93-96 [52] Moufu Kong, Xingbi Chen. Novel high-voltage, high-side and low-side power devices with a single control signal[J]. Journal of Semiconductor, 2013, 34(9): 094009-(1-5) [53] Junji Cheng, Xingbi Chen. New planar junction edge termination technique using OPTVLD with a buried layer[J]. IEEE Trans. Electron Devices, 2013, 60(7): 2428-2431 [54] Moufu Kong, Xingbi Chen. A novel isolation method for half-bridge power ICs[J]. IEEE Trans. Electron Devices, 2013, 60(7): 2318-2323 [55] Haimeng Huang, Xingbi Chen. New expressions for non-punch-through and punch-through abrupt parallel-plane junctions based on Chynoweth law[J]. Journal of Semiconductor, 2013, 34(7): 074003-(1-5) [56] Haimeng Huang, Xingbi Chen. An analytical model for the electric field distributions of buried superjunction devices[J]. Journal of Semiconductor, 2013, 34(6): 064006-(1-4) [57] Liheng Zhu, Xingbi Chen. A Novel Snapback-Free Reverse Conducting IGBT with Anti-parallel Shockley Diode. Proc. ISPSD, 2013, 261-264 [58] Junji Cheng, Xingbi Chen. A novel low-side structure for OPTVLD-SPIC technologically compatible with BiCMOS[C]. Proc. ISPSD, 2013, 123-126 [59] Xinjiang Lyu, Xingbi Chen. Vertical power Hk-MOSFET of hexagonal layout[J]. IEEE Trans. Electron Devices, 2013, 60(5): 1709-1715 [60] Haimeng Huang, Xingbi Chen. Optimization of specific on-resistance of semisuperjunction trench MOSFETs with charge balance[J]. IEEE Trans. Electron Devices, 2013, 60(3): 1195-1201 [61] Junji Cheng, Xingbi Chen. A practical approach to enhance yield of OPTVLD products[J]. IEEE Electron Device Letters, 2013, 34(2): 289-291 [62] Liheng Zhu, Xingbi Chen. An investigation of a novel snapback free reverse-conducting IGBT and with dual gates[J]. IEEE Trans. Electron Devices, 2012, 59(11): 3048-3053 [63] Moufu Kong, Xingbi Chen. High voltage low side and high side power devices based on VLD technique[C]. Proc. ICSICT, 2012, 996-998 [64] Haimeng Huang, Xingbi Chen. Optimization of specific on-resistance of balanced symmetric superjunction MOSFETs based on a better approximation of ionization integral[J]. IEEE Trans. Electron Devices, 2012, 59(10): 2742-2747 [65] Junji Cheng, Xingbi Chen. Hot-carrier reliability in OPTVLD-LDMOS[J]. Journal of Semiconductors, 2012, 33(6): 064003-(1-4) [66] Junji Cheng, Xingbi Chen. Low specific on-resistance p-type OPTVLD-LDMOS with double hole-conductive paths for SPIC application[C]. Proc. ISPSD, 2012, 225-228 [67] Hao Hu, Zhi Lin, Xingbi Chen. A novel high voltage start-up current source for SMPS[C]. Proc. ISPSD, 2012, 197-200 [68] Hao Hu, Xingbi Chen. A novel high speed lateral IGBT with a self-driven second gate[J]. Journal of Semiconductors, 2012, 33(3): 034004-(1-4) [69] 王永维, 陈星弼. 一种具有独特导通机理的新型超结IGBT[J]. 固体电子学研究与进展, 2011, 31(6): 545-548, 600 [70] Wenfang Du, Xingbi Chen. A study of second saturation effect of OPTVLD NMOS[C]. Proc. ASICON, 2011, 551-554 [71] Haimeng Huang, Yongwei Wang, Xingbi Chen. An analytical model for SOI triple RESURF devices[C]. Proc. ASICON, 2011, 547-550 [72] Junhong Li, Ping Li, Weirong Huo, Guojun Zhang, Yahong Zhai, Xingbi Chen. Analysis and fabrication of an LDMOS with high-permittivity dielectric[J]. IEEE Electron Device Letters, 2011, 32(9): 1266-1268 [73] Qimeng Jiang, Minzhi Wang, Xingbi Chen. A high-speed deep-trench MOSFET with a self-biased split gate[J]. IEEE Trans. Electron Devices, 2010, 57(8): 1972-1977 [74] Xinjiang Lv, Xingbi Chen. An integrated low voltage power supply with self-voltage-clamped characteristic[C]. Proc. ICSICT, 2010, 114-116 [75] Xuqiang Zhu, Xingbi Chen. A novel electrostatic discharge protection design based on SCR[C].Proc. ICSICT, 2010, 950-952 [76] Hao Hu, Xingbi Chen. A novel high voltage start up circuit for an integrated switched mode power supply[J]. Journal of Semiconductors, 2010, 31(9): 094012-(1-4) [77] 朱利恒, 蒋其梦, 陈星弼. 具有更宽安全工作区的IGBT元胞的研究与设计[J]. 微电子学, 2010, 40(6): 904-907 [78] Hao Hu, Xingbi Chen. A novel PMOS controlled high voltage current source[C]. Proc. ICCCAS, 2010, 514-517 [79] Hao Hu, Xingbi Chen. A simple expression for impurity distribution after multiple diffusion processes[J]. Journal of Semiconductors, 2010, 31(5): 052004-(1-4) [80] Jizhi Liu, Xingbi Chen. A quasi-3-dimensional simulation method for a high-voltage level-shifting circuit structure[J]. Journal of Semiconductors, 2009, 30(12): 125001-(1-6) [81] Jizhi Liu, Xingbi Chen. A novel self-generated low-voltage power supply for the gate-driver of high-voltage off-line SMPS[C]. Proc. ISPSD, 2009, 184-187 [82] Jizhi Liu, Xingbi Chen. A new level-shifting structure with multiply metal rings by divided RESURF technique[J]. Journal of Semiconductors, 2009, 30(4): 044005-(1-5) [83] Lina Guo, Youling Yu, Weisheng Xu, Zhaogen Jiang, Xingbi Chen. A novel control technique for digital power factor correction[C]. Proc. ICSICT, 2006, 2070-2072 [84] 李梅芝, 陈星弼. 栅压对LDMOS在异常大电流下工作的影响[J]. 半导体学报, 2007, 28(8): 1256-1261 [85] 李梅芝, 陈星弼. LDMOS开关在不同频率下的热安全工作[J]. 半导体学报, 2007, 28(6): 938-942 [86] 李梅芝, 陈星弼. 栅压对LDMOS在异常大电流下工作的影响[J]. 微电子学, 2007, 37(4): 478-481 [87] 郭丽娜, 陈星弼, 许维胜, 余有灵. 一种新的基于DSP的数字功率因数校正控制策略[J]. 电子技术应用, 2007, (2): 21-23 [88] 李梅芝, 郭超, 陈星弼. LDMOS在正常开关工作下的瞬态热效应[J]. 半导体学报, 2006, 27(11): 1989-1993 [89] Lina Guo, Weisheng Xu, Ying Lu, Zhiyu Xu, Xingbi Chen. A novel voltage sensor-less control technique synthesis for a boost AC/DC pre-regulator[C]. Proc. ICARCV, 2006, [90] 郭丽娜, 陈星弼. 灵巧功率集成电路中功率MOSFET电流感知方法的研究[J]. 现代电子技术, 2006, (2): 108-109, 112 [91] 刘继芝, 陈星弼, 李定. 一种用于开关电源启动电路的新型自偏置高压器件结构[J]. 半导体学报, 2006, 27(1): 132-136 [92] 李梅芝, 韦光萍, 陈星弼. LDMOS 的局部电热效应分析[J]. 半导体学报, 2005, 26(9): 1823-1828 [93] 郭丽娜, 陈星弼. 电子镇流器中智能过流保护的简易实现方法[J]. 灯与照明, 2005, 29(3): 41-42 [94] 潘飞蹊, 陈星弼. MLD 结构快恢复二极管trr-T 特性的理论分析[J]. 半导体学报, 2005, 26(1): 126-132 [95] 潘飞蹊, 陈星弼. 高功率因数Boost变换器电流滞环控制的一种简单实现方案[J]. 电子学报, 2004, 32(8): 1330-1333 [96] 潘飞蹊, 陈星弼. 一种Boost型PFC变频控制电路的简单实现方案[J]. 电力电子技术, 2004, 38(1): 30-32 [97] 杨洪强, 郭丽娜, 郭超, 韩磊, 陈星弼. 具有电阻场板的薄膜 SOI-LDMOS 的精确解析[J]. 半导体学报, 2003, 24(9): 977-982 [98] 潘飞蹊, 陈星弼. 用Buck-Boost变换器实现PFC和半桥驱动输出[J]. 电力电子技术, 2003, 37(6): 17-20 [99] Hongqiang Yang, Lei Han, Xingbi Chen. Improvement of electrical performance of SOI-LIGBT by resistive field plate[J]. Journal of Semiconductors, 2002, 23(10): 1014-1018 [100] 郭丽娜, 成民, 杨洪强, 陈星弼. 一种新型的荧光灯电子镇流器用振荡电路的简易实现方法[J]. 电子器件, 2002, 25(4): 313-318 [101] Hongqiang Yang, Xingbi Chen. A high speed IGBT based on dynamic controlled anode-short[J]. Journal of Semiconductors, 2002, 23(4): 347-351 [102] Jin He, Ru Huang, Xing Zhang, Yangyuan Wang, Xingbi Chen. Analytical model of three-dimensional effect on voltage and edge peak field distributions and optimal space for planar junction with a single field limiting ring[J]. Solid-State Electronics, 2001, 45(1): 79-85 [103] Hongqiang Yang, Xingbi Chen. IGBT with dynamic controlled anode-short used in power IC[C]. Proc. ICSICT, 2001, 120-122 [104] Lei Han, Xingning Ye, Xingbi Chen. A novel high-voltage detector integrated into SPIC by using FFLR[J]. Journal of Semiconductors, 2001, 22(10): 1250-1254 [105] 杨洪强, 陈星弼. 半桥式功率输出级中高速低功耗低侧管的实现[J]. 电子学报, 2001, 29(6): 1-3 [106] 何进, 王新, 陈星弼. 基于SDB技术的新结构PT型IGBT器件研制[J]. 半导体学报, 2000, 21(9): 877-881 [107] 何进, 陈星弼, 王新. 直接键合硅片的三步亲水处理法及界面电特性[J]. 功能材料, 2000, 31(1): 58-59 [108] 陈雪英, 陈星弼. 关于荧光灯电子镇流器的报告. 第二届中国西部地区微电子技术学术年会, 1999 [109] 何进, 王新, 陈星弼. VDMOS均匀掺杂外延区的优化设计[J]. 半导体学报, 1999, 20(11): 977-982 [110] Jin He, Xin Wang, Xingbi Chen. Study on interfacial SiO2 layer of silicon direct bonding[J]. Journal of Semiconductors, 1999, 20(4): 319-323 [111] Jin He, Xin Wang, Xingbi Chen. Analytical calculation of avalanche breakdown voltage of the single-diffused junction based on double-sided asymmetric linearly graded approximation[J]. Journal of Semiconductors, 1999, 20(7): 612-618 [112] Jin He, Xin Wang, Xingbi Chen. Closed analytical solution of breakdown voltage for planar junction and lateral curvature effect[J]. Journal of Semiconductors, 1999, 20(9): 753-758 [113] 何进, 陈星弼, 王新. 硅片直接键合的微观动力学研究[J]. 半导体技术, 1999, 24(6): 33-35 [114] 何进, 王新, 陈星弼. 硅-硅直接键合界面上SiO2的非稳定性[J]. 电子科技大学学报, 1999, 28(5): 494-497 [115] 何进, 王新, 陈星弼. 硅-硅直接键合的亲水处理机界面电特性[J]. 微电子学, 1999, 29(5): 353-357 [116] 何进, 陈星弼, 杨传仁, 王新. 直接键合硅片的亲水处理及其表征[J]. 半导体技术, 1999, 24(5): 23-25 [117] 何进, 陈星弼, 王新. VDMOS均匀掺杂外延区优化设计的简单理论[J]. 电子器件, 1999, 22(3): 143-148 [118] 何进, 陈星弼, 杨传仁, 刘世程. TiO2(Ag)纳米半导体薄膜的制备及其光催化性能[J]. 电子元件与材料, 1999, 18(1): 13-16 [119] 何进, 陈星弼. C-2CH复合型PTCR薄膜[J]. 电子元件与材料, 1998, 10(4): 6-11 [120] 张波, 陈星弼, 李肇基. JTE结的二维电场分析[J]. 半导体学报, 1993, 14(10): 626-632 [121] 曾军, 李肇基, 陈星弼. 有场限环和横向变掺杂的平面结二极管电场分布的二维数值分析[J]. 电子学报, 1992, 20(5): 18-24 [122] Zhaoji Li, Xingbi Chen, Hongquan Yu. Analysis of thermal characteristics of VDMOS power transistors[J]. Solid-State Electronics, 1991, 34(3): 225-231 [123] 李肇基, 俞洪全, 陈星弼. VDMOS全热程的温度分布[J]. 半导体学报, 1990, 11(6): 435-440 [124] 李肇基, 李忠民, 陈星弼. p-n结电场分布的一种解析法[J]. 半导体学报, 1990, 11(2): 144-147 [125] 李肇基, 陈星弼, 曾军. 功率器件有JTE结构的电场的数值分析与模拟[J]. 电子科技大学学报, 1989, 18(4): 362-367 [126] 李肇基, 陈星弼, 曾军. 高压功率器件特性的数值分析[J]. 电子科技大学学报, 1989, 18(3): 296-300 [127] 李志奇, 陈星弼. LDMOS功率场效应晶体管的设计与研制[J]. 微电子学, 1988, 18(3): 1-7 [128] 李智, 陈星弼, 黄勤. 功率VD-MOSFET饱和区中的漏特性[J]. 成都电讯工程学院学报, 1988, 17(2): 167-173 [129] J. V. 哈烈孟, 陈星弼. 高频铁磁材料与铁淦氧磁物材料—II[J]. 电信科学, 1956, (3): 30-34 [130] J. V. 哈烈孟, 陈星弼. 高频铁磁材料与铁淦氧磁物材料—I[J]. 电信科学, 1956, (2): 21-25

他申请美国发明专利21项（已批准20项）、中国发明专利20项（已批准17项）及国际发明专利1项[1] 陈星弼. 用于半导体器件的表面耐压区、半导体器件和电容器[P]. CN 103208516A, 2013.07.17 [2] 陈星弼. 半导体器件的含导电颗粒的绝缘体与半导体构成的耐压层[P]. CN 103137658A, 2013.06.05 [3] 陈星弼. 一种控制两种载流子的晶闸管[P]. CN 102651392A, 2012.08.29 [4] 陈星弼. 低压电源[P].ࣺᯬ