教育背景
2009.9-2012.6中国科学院上海技术物理研究所,获微电子学与固体电子学专业理学博士学位；
2005.9-2008.3中国科学院长春光学精密机械与物理研究所,获凝聚态物理学专业理学硕士学位；
1983.8-1987.6吉林大学，获电子科学与技术专业工学学士学位。
工作经历
2012.7-至今扬州大学副教授
2008.3-2009.8Crosslight公司中国分公司技术工程师
项目课题经历
国家自然科学基金青年基金项目（项目编号：61404114）
江苏省自然科学基金青年基金项目（项目编号：BK20140491）
江苏省高校自然科学研究项目（项目编号：14KJB140016）
扬州大学科技创新培育基金项目（项目编号：2013CXJ011）
论文、成果、著作等
(1)LiwenChengandShudongWu.PerformanceenhancementofblueInGaNlight-emittingdiodeswithaGaN-AlGaN-GaNlastbarrierandwithoutanAlGaNelectronblockinglayer.IEEEJ.QuantumElectron.50(4),261(2014)
(2)Li-WenCheng,Chun-YanXu,YangSheng,Chang-ShengXia,Wei-DaHu,andWeiLu.StudyonGaN-basedlightemittingdiodewithInGaN/GaN/InGaNmulti-layerbarrier.Opt.Quant.Electron.44(3-5),75(2012)
(3)Li-WenCheng,YangSheng,Chang-ShengXia,WeiLu,MichelLestrade,andZhan-MingLi.Simulationforlightpowerdistributionof3DInGaN/GaNMQWLEDwithtexturedsurface.Opt.Quant.Electron.42(11-13),739(2011)
(4)ChangShengXia,Z.M.SimonLi,Z.Q.Li,YangSheng,ZhiHuaZhang,WeiLu,andLiWenCheng.OptimalnumberofquantumwellsforblueInGaN/GaNlight-emittingdiodes.Appl.Phys.Lett.100,263504(2012)
(5)ChangShengXia,Z.M.SimonLi,WeiLu,ZhiHuaZhang,YangSheng,andLiWenCheng.DroopimprovementinblueInGaN/GaNmultiplequantumwelllight-emittingdiodeswithindiumgradedlastbarrier.Appl.Phys.Lett.99,233501(2011)
(6)ChangShengXia,Z.M.SimonLi,WeiLu,ZhiHuaZhang,YangSheng,andLiWenCheng.EfficiencyenhancementofblueInGaN/GaNlightemittingdiodeswithanAlGaN-GaN-AlGaNelectronblockinglayer.J.Appl.Phys.111,094503(2012)
(7)S.M.He,X.D.Luo,B.Zhang,L.Fu,L.W.Cheng,J.B.Wang,andW.Lu*.Junctiontemperaturemeasurementoflightemittingdiodebyelectroluminescence.Rev.Sci.Instrum.82,123101(2011)
(8)ShuchangWang,XiongZhang,HaoGuo,HongquanYang,MinZhu,LiwenCheng,XianghuaZeng,andYipingCui.EnhancedperformanceofGaN-basedlight-emittingdiodesbyusingap-InAlGaN/GaNsuperlatticeaselectronblockinglayer.J.Mod.Opt.60(21),2012(2013)
(9)Li-wenCheng,YangSheng,Chang-ShengXia,andWei-daHu.EfficiencyenhancementinInGaN/GaNlight-emittingdiodesbydecreasingthethicknessoflastbarrier.IEEE,13thInternationalConferenceonNumericalSimulationofOptoelectronicDevices,2013.08,49,Vancouver,(2013)
(10)Li-WenCheng,YangSheng,Chang-ShengXia,WeiLu,Lestrade,M.,Zi-QiangLi,Zhan-MingLi.EffectsofpolarizationchargeinGaN-basedbluelaserdiodes(LD).IEEE,10thInternationalConferenceonNumericalSimulationofOptoelectronicDevices,13-14(2010)
(11)Li-WenCheng,YangSheng,Chang-ShengXia,WeiLu,Lestrade,M.,Zi-QiangLi,Zhan-MingLi.Simulationforlightpowerdistributionof3DInGaN/GaNMQWLEDwithtexturedsurface.IEEE,10thInternationalConferenceonNumericalSimulationofOptoelectronicDevices,1-2(2010)
(12)LiwenCheng,ChunyanXu,YangSheng,WeidaHu,WeiLu,andZhanming(Simon)Li.StudyofInGaN/GaN/InGaNMulti-LayerBarrierinGaN-basedLightEmittingDiode.IEEE,11thInternationalConferenceonNumericalSimulationofOptoelectronicDevices,31-32(2011)
(13)ChangShengXia,Z.M.SimonLi,WeiLu,ZhiHuaZhang,YangSheng,andLiWenCheng.EfficiencyenhancementofblueInGaN/GaNlightemittingdiodeswithanAlGaN-GaN-AlGaNelectronblockinglayer.J.Appl.Phys.111,094503(2012)
(14)S.M.He,X.D.Luo,B.Zhang,L.Fu,L.W.Cheng,J.B.Wang,andW.Lu.Junctiontemperaturemeasurementoflightemittingdiodebyelectroluminescence.Rev.Sci.Instrum,82,123101(2011)
(15)FanYU-pei,ChengLi-wen,LinYue-ming,ZhangJun-bing,andZengXiang-hua.OptimizationofelectrodeshapeforhighpowerGaN-basedlight-emittingdiodes.Optoelectron.Lett,Vol.5No.5(2009)
(16)程立文，梁雪梅，秦莉，王祥鹏，盛阳，宁永强，王立军；980nmOPS-VECSEL关键参数的理论分析，发光学报，2008年04期
(17)梁雪梅，吕金锴，程立文，秦莉，宁永强，王立军；920nm光抽运垂直外腔面发射半导体激光器结构设计；发光学报；2010年01期
(18)陈柏众，戴特力，梁一平，秦莉，赵红，周勇，程立文；用有限元法讨论光抽运垂直外腔面发射半导体激光器的散热性能；中国激光；2009年10期
(19)秦莉，田振华，程立文，梁雪梅，史晶晶，张岩，彭航宇，宁永强，王立军；980nmOPS-VECSEL单个谐振周期内量子阱数目的理论分析；半导体光电；2009年06期
专利、著作版权等
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