1.J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “Low-frequency noise behavior of tunneling field effect transistors”, Appl. Phys. Lett. 97, 243503 (2010). 
2.J. Wan, A. Zaslavsky, and S. Cristoloveanu, “Comment on "Investigation of tunnel field-effect transistors as a capacitor-less memory cell" [Appl. Phys. Lett. 104, 092108 (2014)]”, Appl. Phys. Lett. 106, 016101 (2015).
3.Y. Solaro, J. Wan, P. Fonteneau, C. Fenouillet-Beranger, C. Le Royer, A. Zaslavsky, P. Ferrari, S. Cristoloveanu "Z2-FET: A promising FDSOI device for ESD protection", Solid-State Electronics. 97, 23 (2014). 
4.J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “A systematic study of the sharp-switching Z2-FET device: from mechanism to modeling and applications”, Solid-State Electronics. 90, 2 (2013)
5.J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “Progress in Z2-FET 1T-DRAM: Retention time, writing modes, selective array operation, and dual bit storage”, Solid-State Electronics. 84, 147 (2013)
6.J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “A feedback silicon-on-insulator steep switching device with gate-controlled carrier injection”, Solid-State Electronics. 109, 111 (2012).
7.J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “A Compact Capacitor-Less High-Speed DRAM Using Field Effect-Controlled Charge Regeneration”, IEEE Electron Device Letters. 33, 179 (2012).
8.J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “Novel Bipolar-Enhanced Tunneling FET (BET-FET) with Simulated High ON Current”, IEEE Electron Device Letters. 34, 24 (2013). 
9.J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “A tunneling field effect transistor model combining interband tunneling with channel transport”, J. Appl. Phys. 110, 104503 (2011).
10.J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “Tunneling FETs on SOI: Suppression of Ambipolar Leakage, Low-Frequency Noise Behavior, and Modeling”, Solid-State Electronics. 65-66, 226 (2011).