领域：新一代信息技术产业 学校：复旦大学职称：教授
低维材料性质的基础理论和实验研究。涉及各种薄膜及微纳结构材料（介电、半导体、金属及多种复合材料）的光、电、磁学等内禀性质。智能信息存储技术与材料的基础与应用研究。涉及相变存储材料的掺杂改性、具有PRAM及RRAM特性的微纳结构原型器件的基本性质、类神经元原型器件设计与制备等研究。...
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1985-1989年 曲阜师范大学物理系 本科生
1992-1995年 中国科学院上海光机所 硕士研究生
1996-1999年 中国科学院上海光机所 博士研究生
1999-2001年 复旦大学物理系 博士后
2004年 美国加州大学圣地亚哥分校 访问学者
1. Contrastive investigation on linear optical properties and nonlinear absorption behaviors between Sb2Se3 and Sb2Te3 thin films, MATERIALS RESEARCH EXPRESS, 2019, 6(8), 086446.
2. Linear and nonlinear optical properties modulation of Sb2Te3/GeTe bilayer film as a promising saturable absorber, RESULTS IN PHYSICS, 2019, 13, 102282.
3. Tunable nonlinear optical absorption in amorphous and crystalline Sb2Se3 thin films, JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 791, 753-760.
4. A study on optical properties of Sb2Se3 thin films and resistive switching behavior in Ag/Sb2Se3/W heterojunctions, RESULTS IN PHYSICS, 2019, 13, 102228.
5. Nanostructure and optical property investigations of SrTiO3 films deposited by magnetron sputtering, MATERIALS, 2019, 12(1), 138.
6. Characterization of interfacial barrier charging as resistive switching mechanism in Ag/Sb2Te3/Ag heterojunction, PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2018, 20, 18200-18206. (Backcover story) http://xlink.rsc.org/?DOI=C8CP00901E
7. Investigations on optical phase change properties of intrinsic GeSb and Ti-doped GeSb, OPTICAL MATERIALS EXPRESS, 2018, 8(4), 936-947.
8. Structural and Optical Properties of Ti-doped InTe Thin Films, JOURNAL OF PHYSICAL CHEMISTRY C, 2018, 122(11), 6267-6272.
9. Memresistive switching behaviors in In2Te5asymmetrical hetero-structures, ELECTRONICS LETTERS, 2018, 54(3), 169-171.
10. Resolving switching mechanisms in chalcogenide-based memristors, ELECTRONICS LETTERS, 2018, 54 (3), 111. (Cover story)
11. Thickness dependence of a giant nonlinear saturable absorption response in GeSb4Te7thin films, JOURNAL OF PHYSICS COMMUNICATION, 2018, 2(1), 015009.
12. Intrinsic mechanism in nonvolatile polycrystalline zirconium oxide sandwiched structure, JOURNAL of MATERIALS SCIENCE: Materials in Electronics, 2018, 29(3), 2301-2306.
13. Thickness effect on the physical properties of rf sputtered In2Te5 thin films, CHALCOGENIDE LETTERS, 2017, 14(11), 439-446.
14. Annealing effect in a nitrogen atmosphere on structural and optical properties of In2Te5 thin films, OPTICAL MATERIALS EXPRESS, 2017, 7(11), 4147-4155.
15. Memristive behavior in In2Se3asymmetrical heterostructures, RSC Advances, 2017, 7, 46431-46435.
16. Regulation of the magnetic behavior by adjusting oxygen stoichiometry in ZrOx film, CHINESE OPTICS LETTERS, 2016, 14(11), 113101.
17. In2Te3thin films: a promising nonlinear optical material with tunable nonlinear absorption response, RSC Advances, 2016, 6, 103357-103363.
18. Structural and optical properties of Ge60Te40: experimental and theoretical verification, JOURNAL OF PHYSICS D: Applied Physics, 2016, 49, 155105.
19. Investigations on phase change characteristics of Ti-doped Ge2Sb2Te5 system, JOURNAL OF PHYSICS D: Applied Physics, 2015, JOURNAL OF PHYSICS D: Applied Physics, 2015, 48 475108.
20. Nature of charge transport andp-electron ferromagnetism in nitrogen-doped ZrO2: An ab initio perspective, SCIENTIFIC REPORTS, 2015, 5, 8586.
21. Role of oxygen defects in inducing the blue photoluminescence of zinc oxide films deposited by magnetron sputtering, CHINESE OPTICS LETTERS, 2015, 13(10), 103101.
22. Optical properties investigation of [nc-Si:SiO2/SiO2]30 periodic multilayer films, APPLIED PHYSICS A, 2012, 109(3), 547-551.
23. Phase change behavior in titanium-doped Ge2Sb2Te5 films, APPLIED PHYSICS LETTERS, 2011, 98, 231910.
24. Spectroscopic ellipsometric properties and resistance switching behavior in Six(ZrO2)100-x films, CHINESE OPTICS LETTERS, 2011, 9(5), 053102.
25. Electrical levels of defect investigation of ZrO2 thin film by spectroscopic ellipsometry, JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B: Microelectronics and Nanometer Structures, 2009, 27(3), 1030-1034.
26. Thermal stability of reliable polycrystalline zirconium oxide for nonvolatile memory application, CHINESE PHYSICS LETTERS, 2008, 25(10), 3742-3745.
27. Reproducible unipolar resistance switching in stoichiometric ZrO2 films, APPLIED PHYSICS LETTERS, 2007, 90(18), 183507.
28. Phase change characteristics of aluminum doped Ge2Sb2Te5 films prepared by magnetron sputtering, OPTICS EXPRESS, 2007, 15(17), 10584-10590.
发表论文百余篇，被引1165次。获得发明专利十余项。
