1998.3 -- 2004.4 大连理工大学 材料学 博士 1991.9 -- 1994.7 吉林大学 半导体物理与半导体器件物理 硕士 1987.9 -- 1991.7 辽宁大学 光学 学士

2004.1 -- 至今 物理与光电工程学院 副教授 1994.7 -- 2003.12 电气工程与应用电子技术系 副教授

主持或参加科研项目及人才计划项目情况（按时间倒序排序）： 1、国家自然科学基金面上项目，61474013、SiC MOS器件界面缺陷及其钝化研究、2015/01-2018/12、79万元、在研、参加。 2、国家自然科学基金面上项目，51102034、GaN纳米线阵列的晶体缺陷控制及其光学特性、2012/01-2014/12、25万元、已结题、参加。 3、国家自然科学基金主任基金，61040058、AlN/自持金刚石厚膜结构高频声表面波滤波器的研制、2011/01-2011/12、10万元、已结题、参加。 ᠦ୔

近年来发表的研究论文： [1] Qin FuWen, Zhong Miaomiao, Liu Yuemei, Wang Hui, Bian Jiming, Wang Chong, Zhao Yue, Zhang Dong, Li Qinming. Growth of high c-orientated crystalline GaN films on amorphous Cu/glass substrates with low-temperature ECR-PEMOCVD，Journal of Materials Science: Materials in Electronics，2014，25（2）：969-973。 [2] Qin Fuwen, Zhong Miaomiao, Wang Chong, Liu Yuemei, Bian Jiming, Wang Enping, Wang Hui, Zhang Dong. Deposition and characteristics of GaN films on Ni metal substrate by ECR-PEMOCVD，Journal of Materials Science: Materials in Electronics,2013,24（12）：5069-5074 [3] Qin Fuwen, Zhang Dong, Bai Yizhen, Ju Zhenhe, Li Shuangmei, Li Yucai, Pang Jiaqi, Bian Jiming. Deposition and properties of highly c-oriented of InN films on sapphire substrates with ECR-plasma-enhanced MOCVD，Rare Metals，2012，31（2）：150-153。 [4] Liu Yuemei, Qin Fuwen, Zhang Dong, Bian Jiming, Zhao Yue, Wang Enping, Wang Shuai, Zhong Miaomiao, Ju Zhenhe. Low-temperature growth of highly c-oriented GaN films on Cu coated glass substrates with ECR-PEMOCVD, Journal of Crystal Growth, 2013, 368：92-96 [5] Duan Zhongwei, Qin Fuwen, Lin Guoqiang, Bian Jiming, Zhang Dong, Wang Enping. Effect of temperature on GaN films deposited on graphite substrates at low-temperature，Applied Surface Science,2013,280：909-913 [6] Wang Enping, Bian Jiming, Qin Fuwen, Zhang Dong, Liu Yuemei, Zhao Yue, Duan Zhongwei, Wang Shuai. Effect of TMGa flux on GaN films deposited on Ti coated on glass substrates at low temperature, Chinese Science Bulletin，2013，58（30）：3617-3623 [7] Zhao Yue, Qin Fuwen, Bai Yizhen, Ju Zhenhe, Zhao Yan, Zhang Xiaohui, Li Shuangmei, Zhang Dong, Bian Jiming, Li Yang. Low temperature synthesis of GaN films on ITO substrates by ECR-PEMOCVD，Vacuum，2013，92：77-80 [8] Liu W.F., Luo Y. L., Sang Y.C., Bian J.M., Zhao Y., Liu Y.H., Qin Fuwen. Adjusted surface work function of InN films annealed at vacuum and at high-pressure N-2 conditions，Materials Letters, 2013, 95：135-138。 [9] Zhang Dong, Qin Fuwen, Bai Yizhen, Bian Jiming, Li Shuai, Pan Li, Zhi Anbo, Liu Xinglong, Jiang Xin. Effect of buffer layer on the structural and morphological properties of GaN films grown with ECR-PEMOCVD，Diamond and Related Materials, 2012, 21：88-91 [10] Zhi Anbo, Qin Fuwen, Zhang Dong, Bian Jiming, Yu Bo, Zhou Zhifeng, Jiang Xin. Low-temperature growth of highly c-oriented InN films on glass substrates with ECR-PEMOCVD, Vacuum, 2012, 86（8）：1102-1106 [11]Zhang Dong，Qin Fuwen, Bai Yizhen, Bian Jiming, Li Shuai, Pan Li, Zhi Anbo, Liu Xinglong, Jiang Xin. Effect of buffer layer on the structural and morphological properties of GaN films grown with ECR-PEMOCVD, Diamond and Related Materials, 2012, 21（0）：88-91。 [12] Zhi Anbo, Qin Fuwen, Zhang Dong, Bian Jiming, Yu Bo, Zhou Zhifeng, Jiang Xin. Low-temperature growth of highly c-oriented InN films on glass substrates with ECR-PEMOCVD, Vacuum, 2012, 86（8）：1102-1106 [13] Liu Bingbing, Wang Dejun, Qin Fuwen. Enhanced TiC-SiC Ohmic contacts by ECR hydrogen plasma pretreatment and low-temperature post-annealing, Applied Surface Science, 2015, 355（20）：59-63 [14] Zhong, M.M., Qin Fuwen, Liu Y.M., Wang C., Bian J.M., Wang E.P., Wang H., Zhang D., Low-temperature growth of high c-orientated crystalline GaN films on amorphous Ni/glass substrates with ECR-PEMOCVD，Journal of Alloys and Compounds，2014，583：39-42 [15] Zhu Qiaozhi, Qin Fuwen, Li Wenbo，Wang Dejun. Electrical and physical properties of 4H-SiC MOS interface with electron cyclotron resonance microwave nitrogen plasma post-oxidation annealing, Physica B: Condensed Matter, 2014, 432：89-95

授权发明专利 [1] 秦福文，林国强，刘勤华，金属基片垂直GaN基LED芯片及其制备方法，2014.12.17，中国，ZL 2012 1 0247142.9。 [2] 秦福文，林国强，刘勤华，采用金属基片制备垂直GaN基LED芯片的设备，2014.12.17，中国，ZL 2012 1 0247144.8。