2006.9 -- 2011.7 厦门大学 凝聚态物理 博士 2002.9 -- 2006.7 厦门大学 物理学 学士

2011.8 -- 2014.9 新加坡国立大学 博士后研究员

主持课题（2015-2020）： 1、氮化镓自支撑衬底大功率垂直结构场效应晶体管基础技术研究（国家自然科学基金项目） 2、基于纵向短栅极沟道结构的低导通电阻常关型GaN基HEMT器件制备研究（国家自然科学基金项目） 3、氮化镓材料功率器件新结构与关键工艺技术研究（辽宁省科技重大专项课题） 4、多重2DEG沟道和凹槽栅组合GaN MOS-HEMT器件的研制（安徽省自然科学研究 重大项目） 5、低导通电阻大阈值电压常关型AlGaN/GaN基HEMT器件制备研究（辽宁省教育厅项目） 6、常关型GaNᠦ୔

代表性论文（一作和通讯）： [1] Z. Sun, H. Huang*, et al., Improving Performances of Enhancement-Mode AlGaN/GaN MIS-HEMTs on 6-inch Si Substrate Utilizing SiON/Al2O3 Stack Dielectrics, IEEE Electron Device Lett. 41, pp. 135-138, 2020 (SCI, JCR-1区). [2] Z. Sun, H. Huang*, et al., A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure, Micromachines, vol. 10, p. 848, 2020 (SCI, JCR-2区). [3] H. Huang*, Z. Sun, Y. Cao, et al., Investigation of Surface Traps-Induced Current Collapse Phenomenon in AlGaN/GaN High Electron Mobility Transistors with Schottky Gate Structures, J. Phys. D: Appl. Phys., vol. 51, p. 345102, 2018 (SCI, JCR-2区). [4] H. Huang*, F. Li, Z. Sun, and Y. Cao, Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices, Micromachines, vol. 9, p. 658, 2018 (SCI, JCR-2区). [5] H. Huang*, Z. Sun, F. Zhang, et al., Analytical model for accurate extraction of metal-semiconductor ohmic contact parameters using a novel electrode-pair layout scheme, Physica E, vol. 108, pp. 197-201, 2019 (SCI, JCR-2区). [6] H. Huang*, F. Li, Z. Sun, et al., Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Block Layer Structure, Electronics, vol. 8, p. 241, 2019 (SCI, JCR-2区). [7] H. Huang*, F. Li, Z. Sun, et al., Proposal and Demonstration of GaN-Based Normally-Off Vertical Field-Effect Transistor with a Design of Back Current Block Layer, Key Eng. Mater., vol. 787, pp. 69-73, 2018 (EI). [8] H. Huang*, Y. Cao, et al., Improved Wide-bandgap Gallium Nitride Hall Sensors for High Temperature Applications, 2019 Collaborative Conference on Materials Research (CCMR), Goyang, South Korea, June 3-7, pp. **-**, 2019 (SCI). [9] H. Huang*, Z. Sun, et al., Performance-Improved Normally-off AlGaN/GaN High-Electron Mobility Transistors with a Designed p-GaN Area under the Recessed Gate, 13rd IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, pp. 1230-1232, 2016 (EI). [10] Z. Sun, H. Huang*, et al., Improved On-Resistance and Breakdown Voltage Vertical GaN-based Field Effect Transistors, 13rd IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, pp. 1101-1103, 2016 (EI). [11] H. Huang*, Z. Sun, Y. Cao, et al., A New Method for Extracting Ohmic Contact Parameters Obtaining the specific contact resistance from transmission line model measurements, 2018 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, Xi'an, pp. 153-156, 2018 (EI). [12] H. Huang* and Y.C. Liang, "Formation of combined partially recessed and multiple fluorinated-dielectric layers gate structures for high threshold voltage GaN-based HEMT power devices", Solid-State Electronics 114, 148-154, 2015 (SCI, JCR-3区). [13] H. Huang, Yung C. Liang, Ganesh S. Samudra, Ting-Fu Chang, and Chih-Fang Huang, “Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs”, IEEE Trans. Power Electron. 29, 2164-2173, 2014 (SCI, JCR-1区). [14] H Huang, Yung C. Liang, Ganesh S. Samudra, and Cassandra Low Lee Ngo, “Au-Free Normally-off AlGaN/GaN-on-Si MIS-HEMTs using Combined Partially Recessed and Fluorinated Trap-Charge Gate Structures”, IEEE Electron Device Lett. 35, pp. 569-571, 2014 (SCI, JCR-1区). [15] H. Huang*, Y. Xie, et al., “Growth and fabrication of sputtered TiO2 based ultraviolet detectors”, Appl. Surf. Sci. 293, pp. 248-254, 2014, (SCI, JCR-1区). [16] H. Huang, Y. Xie, et al., “Low-Dark-Current TiO2 MSM UV Photodetectors with Pt Schottky Contacts”, IEEE Electron Device Lett. 32, pp. 530-532, 2011 (SCI, JCR-1区). [17] H. Huang*, W. Yang, et al., “Metal-semiconductor-metal ultraviolet photodetectors based on TiO2 films deposited by radio frequency magnetron sputtering”, IEEE Electron Device Lett. 31, pp. 588-590, 2010 (SCI, JCR-1区). [18] H. Huang*, Y.-H. Wang, et al., "Formation of Gate Structure by Multiple Fluorinated Dielectric Layers on Partially Recessed Barrier for High Threshold Voltage AlGaN/GaN Power HEMTs", 11th International Conference on Nitride Semiconductors (ICNS-11), 2015, August 30 - September 4, Beijing, China. [19] H. Huang, Y.-H. Wang, et al., “5V High Threshold Voltage Normally-off MIS-HEMTs with Combined Partially Recessed and Multiple Fluorinated-Dielectric Layers Gate Structures”, 46th SSDM 2014, September 8-11, 2014, Ibaraki, Japan. [20] H. Huang, Y. C. Liang, G. S. Samudra, and C.-F. Huang, “Design of Novel Normally-off AlGaN/GaN HEMTs with Combined Gate Recess and Floating Charge Structures”, IEEE PEDS 2013, April 22-25, 2013, Kitakyushu, Japan. [21] H. Huang, Y. C. Liang, and G. S. Samudra, “Theoretical Calculation and Efficient Simulations of Power Semiconductor AlGaN/GaN HEMTs”, IEEE EDSSC 2012, December 3-5, 2012, Chulalongkorn University, Bangkok, Thailand. [22] H. Huang, Y. C. Liang, et al., “Modelling and Simulations on Current Collapse in AlGaN/GaN Power HEMTs”, SISPAD 2012, September 5-7, 2012, Denver, CO, USA.

近三年主要申请和授权发明专利（部分）： [1] 黄火林、孙仲豪等，具有纵向栅极结构的常关型HEMT器件及其制备方法，专利号：ZL201610109041.3，授权公告日：2018.06.19 [2] 黄火林，具有三明治栅极介质结构的HEMT器件及其制备方法，专利号：ZL201510392175.6，授权公告日：2018.04.10 [3] 黄火林、梁红伟等，一种纵向短开启栅极沟道型HEMT器件及其制备方法，专利号：ZL201510319284.5，授权公告日：2018.04.27 [4] 黄火林、ᠦ୔