2014-2016 University of Rennes 1, micro-electronic PhD. 2010-2013 东南大学，电子科学与工程学院，物理电子学硕士

2017年5月- 南京信息工程大学 电子与信息学院 校聘教授 2016年9月-2017年2月 Centre Commun de Microélectronique de l’Ouest, IETR, Centre national de la recherche scientifique(CNRS法国国家科学研究院), Research fellow 2013年6月-2014年8月 中国科学院国家纳米中心 纳米器件与表征重点实验室

近期主要论著: First author and communication author:顶尖SCI期刊论文 1) Xiang Liu, Wenjian Kuang, Haibin Ni, Jianhua Chang et al, High Efficiency Light-Emitting Transistor with Vertical Metal–Oxide Heterostructure, 2018, Small, vol 14, doi.org/10.1002/smll.201800265, pp.1800265. (工程技术类1区top, SCI, IF: 9.0) 2) Xiang Liu, Wei Lei, Jianhua Chang et al, Highly Sensitive and fast Graphene Nanoribbons/CsPbBr3 Quantum Dots Phototransistor with Enhanced Vertically Metal Oxide Heterostructures, 2018, Nanoscale, accepted. (工程技术类一区SCI, IF:7.5) 3) Xiang Liu, Nianze Liu, Wei Lei et al，Graphene nanomesh photodetector with effective charge tunnelling from quantum dots，2015， Nanoscale, 7(9), 4242-4249. (工程技术类1区，SCI, IF:7.9) 4) Xiang Liu, Arokia Nathan, Wei Lei et al, High-Performance Ge Quantum Dot Decorated Graphene/Zinc-Oxide Heterostructure Infrared Photodetector, 2015, ACS Appl. Mater. Interfaces, 7(4), 2452-2458. (工程技术类1区, SCI, IF:7.5) 5) Xiang Liu, Wei Lei et al, Dual-Gate Phototransistor With Perovskite Quantum Dots-PMMA Photosensing Nanocomposite Insulator, 2017, IEEE Electron Device Letters, 38(9), 1270-1273. (工程技术类2区, SCI, IF:3.1) 6) Xiang Liu, Wei Lei, Arokia Nathan, et al.Photo-modulated Thin Film transistor based on dynamic charge transfer within quantum-dots-InGaZnO interface, 2014, Applied Physics Letters, 104(11):113501-1. (物理类2区, SCI, IF:3.2) 7) Xiang Liu, A FET Structure Field Emission Device with High-speed pulse signal control, 2013, IEEE Electron Device Letters, 34(4):550-552 (工程技术类2区, SCI, IF:3.1) 8) Xiang Liu, Chi Li, Qin Dai et al, Vertical middle-far infrared Quantum-dots device modulated by Graphene Nanomesh transistor, 2018, In progress, Advanced Functional Material, (SCI, IF: 12) 9) Xiang Liu, Zhi Tao et al, High detecting speed perovskite/MoS2 heterostructure photo-transistors, 2018, IEEE Electron Device Letters, under review, (SCI) Co-author合作作者的SCI期刊: 1) Tao, Zhi; Huang, Yi-an; Liu, Xiang et al, High- Performance Photo-Modulated Thin-Film Transistor Based on Quantum dots/Reduced Graphene Oxide Fragment-Decorated ZnO Nanowires , Nano-Micro Letters, 2016.7, 8(3): 247~253. (SCI, IF:4.8) 2) Pan, Jiangyong; Chen, Jing; Liu, Xiang; Tao, Zhi; Lei, Wei; Xu, Feng; Zhang, Zichen, Flexible quantum dot light emitting diodes based on ZnO nanoparticles , RSC Advances, 2015, 5(100): 82192~82198. (SCI, IF:3.7) 3) Kuang, Wen-Jian; Li, Qing; Liu, Xiang; Li, Optical Properties of Ultraviolet Quantum Dot Light-Emitting Devices Using ZnO-Cores With a MgO-Shell , Journal of Display Technology OSA/IEEE, 2015.5, 11(5): 461~465. (SCI, IF:1.8) 4) Pan, Jiangyong; Chen, Jing; Liu, Xiang; Tao, Zhi, Size Tunable ZnO Nanoparticles To Enhance Electron Injection in Solution Processed QLEDs , ACS Photonics, 2016.2, 3(2): 215~222. (SCI, IF: 6.8) 5) Pan, Jiangyong; Chen, Jing; Liu, Xiang; Tao, Zhi; Zhang, Zichen; Lei, Wei, Surface plasmon-enhanced quantum dot lightemitting diodes by incorporating gold nanoparticles, Optics Express, 2016.1.25, 24(2): A33~A43. (SCI, IF: 3.3) Conference paper 第一作者国际会议论文以及大会报告： (1)Liu, Xiang; Emmanuel, Jacques; Mohammed-Brahim, Tayeb; Lei, Wel, Highly sensitive visible and near-infrared photo-FET based on PbS quantum dots embedded in the gate insulator, Sensing Technology (ICST), 2016 10th International Conference on, IEEE, DOI: 10.1109/ICSensT.2016.7796218, 2016: 1-4. (ISTP收录) (2) Xiang, Liu; Chi, Li; Wei, Lei , ZNO nanowires applied in transistor for driving active FE-device, The 26th International Vacuum Nanoelectronics Conferences (IVNC), 芝加哥, 2013.07 (会议论文) (3) Xiang, Liu; Wenjian, Kuang; Mohammed-Brahim Tayeb ; Wei, Lei , Quantum-dots light-emitting Devices in IGZO-TFTs technology fabricated on silicon wafer, 11th International Conference on Thin Film Transistors (ITC2015), 雷恩, 2015.2 (会议论文) 发明专利成果: Xiang Liu, Jacques Emmanuel, Tayeb Mohammed-Brahim, Novel high-performance Light Modulation Thin Film Transistor based on quantum dots doped gate insulating layer, CN105552131A, Evenements juridiques