2018年12月毕业于江南大学，获工学博士学位

2007年10月加入江南大学物联网工程学院

目前共发表SCI收录论文5篇 代表性论文： [1] Linna Zhao, Dawei Yan , Zihui Zhang , Bin Hua, Guofeng Yang, Yanrong Cao,Enxia Zhang, Xiaofeng Gu, and Daniel M. Fleetwood. Temperature-Dependent Efficiency Droop in GaN-Based Blue LEDs. IEEE Electron Device Letters, 2018, 39(4): 528-531. [2] Linna Zhao,Leilei Chen, Guohao Yu, Dawei Yan, Guofeng Yang, Xiaofeng Gu, Bin Liu, Hai Lu. Tunneling-hopping transport model for reverse leakage current in InGaN/GaN blue light-emitting diodes. IEEE Photonics Technology Letters, 2017, 29(17): 1447-1450.Linna Zhao, Peihong Yu, Zixiang Guo, Dawei Yan, Hao Zhou, Jinbo Wu, Zhiqiang Cui, Huarui Sun, Xiaofeng Gu. Progressive current degradation and breakdown behavior in GaN LEDs under high reverse bias stress. Chinese Physics B, 2017, 26(8): 429-432. [3] Linna Zhao, Leilei Chen, Peimin Zhu, Xiang Wang, Qunsi Yang, Dawei Yan, Xiaofeng Gu. Reverse Current Degradation and Breakdown Behavior in GaN LEDs.The 8th Asia Pacific Workshop on Widegap Semiconductors (APWS2017), Qingdao, China, 2017. [4] Wenjie Mou,Linna Zhao, Leilei Chen, Dawei Yan, Huarong Ma, Guofeng Yang, Xiaofeng Gu. GaN-based Schottky barrier ultraviolet photodetectors with graded doping on patterned sapphire substrates. Solid-State Electronics, 2017, 133: 78-82. [5] Jian Ren, Wenjie Mou,Linna Zhao, Dawei Yan, Zhiguo Yu, Guofeng Yang, Shaoqing Xiao, Xiaofeng Gu. A Comprehensive Study of Reverse Current Degradation Mechanisms in Au/Ni/n-GaN Schottky Diodes. IEEE Transactions on Electron Devices, 2017, 64(2): 407-411.

授权专利4项。