[1]      国家自然科学基金青年项目，11304092，Sb、Te掺杂Bi₂Se₃拓扑绝缘体纳米片的制备及表面态输运性质研究，2014/01-2016/12，30万元，主持。

[2]      国家自然科学基金青年项目，11305056，离子束精确掺杂单根CdS纳米带制备及原位性能研究，2014/01-2016/12，28万元，参与。

[3]      国家自然科学基金面上项目，51371079，金属纳米周期结构与石墨烯复合体系的构筑及其在表面增强拉曼散射(SERS)中的应用，2014/01-2017/12，79万元，参与。

[1]      W. X. Shi, N. Liu,   Y. M. Zhou^*, X. A. Cao^*, Effects of Postannealing   on the Characteristics and Reliability of Polyfluorene Organic Light-Emitting   Diodes, IEEE Transactions on Electron Devices, 66(2), 1057, 2019. (SCI)

[2]      J. H. Feng, D. W.   Sun, S. J. Mei, W. X. Shi, F. Mei^*, Y. M. Zhou^*,   J. X. Xu, Y. Jiang, L. Z. Wu, Plasmonic-Enhanced Organic Light-Emitting   Diodes Based on a Graphene Oxide/Au Nanoparticles Composite Hole Injection   Layer, Frontiers in Materials, 2018, 5, 75. (SCI)

[3]      F. Tian, Y. M.   Zhou^*, X. Q. Zhang, L. M. Wei, F. Mei, J. X. Xu, Y. Jiang, L.   Z. Wu, T. T. Kang, G. Yu^*, Weak antilocalization effect in   Tellurium-doped Bi₂Se₃ topological insulator nanowires,   Journal of Infrared and Millimeter Waves, 2017, 36(3), 270-275. (SCI)

[4]      L. Liu, S. Li, Y.   M. Zhou^*, L. Y. Liu, X. A. Cao^*, High-current   stressing of organic light-emitting diodes with different electron-transport   materials, Microelectronics Reliability, 2017, 71, 106-110. (SCI)

[5]      Y. M. Zhou^*, G. Yu, T. Lin, N.   Dai, J. H. Chu, Magneto-transport study of Landau level broadening in a gated   AlGaAs/GaAs parabolic quantum well structure, Physica B, 2012, 407(1),   116-119. (SCI)

[6]      Y. M. Zhou, G. Yu^*,   K. H. Gao, W. Z. Zhou, T. Lin, L. Y. Shang, S. L. Guo, J. H. Chu, N. Dai, D.   G. Austing, Experimental approaches to zero-field spin splitting in a gated   high-mobility In_0.53Ga_0.47As/InP quantum well   structure: weak anti-localization and beating pattern, Journal of Applied   Physics, 2010, 107(5), 053708. (SCI)

[7]      Y. M. Zhou, K. H. Gao, G. Yu^*,   W. Z. Zhou, T. Lin, S. L. Guo, J. H. Chu, N. Dai, Gate-controlled   electron-electron interactions in an In_0.53Ga_0.47As/InP   quantum well structure, Solid State Communications, 2010, 150(5-6), 251-253.   (SCI)

[8]      周远明, 俞国林^*, 高矿红,   林铁, 郭少令,   褚君浩, 戴宁,   弱耦合GaAs/AlGaAs/InGaAs双势阱隧穿结构的磁隧穿特性研究, 物理学报,   2010, 59(6), 4221-4225. (SCI)

[9]      Y. M. Zhou, L. Y. Shang, G. Yu^*,   K. H. Gao, W. Z. Zhou, T. Lin, S. L. Guo, J. H. Chu, N. Dai, D. G. Austing,   Transport properties of a spin-split two-dimensional electron gas in an In_0.53Ga_0.47As/InP   quantum well structure, Journal of Applied Physics, 2009, 106(7), 073722.   (SCI)